Journal of Xidian University ›› 2021, Vol. 48 ›› Issue (2): 190-196.doi: 10.19665/j.issn1001-2400.2021.02.024

• Special Issue: Advances in Radar Technology • Previous Articles     Next Articles

Si CMOS Ka-band millimeter wave power amplifier

TAO Li1,2(),TIAN Tong1,2()   

  1. 1. Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai 200050,China
    2. University of Chinese Academy of Science,Beijing 100049 ,China
  • Received:2020-07-17 Revised:2021-01-06 Online:2021-04-20 Published:2021-04-28


In order to meet the requirement of higher transmission power for the millimeter wave radar or communication system,a Ka band power amplifier is designed based on the 65 nm bulk Si CMOS process.This power amplifier works at 30~32 GHz ,and consists of two-stage CASCODE differential pairs structure amplifiers.Neutralizing capacitances are used to enhance its stability,and the on chip matching network is realized based on transformer coils.After testing,the maximum output power of the power amplifier in the operating frequencies is 16.3 dBm.Its maximum PAE is 16.9 %,-1 dB compression point is 13.2 dBm,and power gain is 23.6 dB.The power amplifier chip presented in this paper has advantages in power gain and chip area utilization,which provides a feasible high power output design example for the silicon-based millimeter wave power amplifier.

Key words: CMOS integrated circuits, millimeter waves, power amplifiers, monolithic microwave integrated circuit

CLC Number: 

  • TN722.7