›› 2010, Vol. 23 ›› Issue (10): 49-52.

• 论文 • 上一篇    下一篇



  1. (1.福建农林大学 机电工程学院,福建 福州 350002;2.福州大学 福建省微电子与集成电路重点实验室,福建 福州 35002)
  • 出版日期:2010-10-15 发布日期:2010-12-31
  • 作者简介:罗志聪(1982-),男,硕士研究生,助教。研究方向:射频集成电路设计与应用和电源管理电路。

Design of the Pseudo-differential Class-E RF Power Amplifier in CMOS Process

 LUO Zhi-Cong, HUANG Shi-Zhen   

  1. (1.Mechanical and Electrical Engineering College,Fujian Agriculture And Forestry University,Fuzhou 350002,China;
    2.Fujian key Laboratory of Microelectronics & Integrated Circuits,Fuzhou University,Fuzhou 350002,China)
  • Online:2010-10-15 Published:2010-12-31


分析了E类功放的非理想因素,其中着重分析寄生电感对系统性能的影响,采用伪差分E类功放结构有效地抑制寄生电感的影响。最后基于理想的设计方程和Load Pull技术,采用 0.18 μm CMOS工艺,设计出高效率的差分E类功率放大器。在电源电压1.8 V,温度25 ℃,输入信号0 dBm条件下,具有最大输出功率26.1 dBm,PAE为60.2%。

关键词: 伪差分E类, 射频功率放大器, Load pull技术, 寄生电感, CMOS


The non-ideal factors of Class E power amplifiers are analyzed with emphasis on the Parasitic inductance effect,which is effectively suppressed by using the pseudo-differential Class E power amplifier structure.Based on the ideal design equations and load pull techniques.an efficient differential class E power amplifier is designed in 0.18 μm TSMC process.Simulation results using ADS (Advanced Design System) show that the power amplifier can deliver 26.1 dBm output power with 60.2 % power-added-efficiency respectively under a single supply voltage of 1.8 V and input power of 0 dBm.

Key words: differential class-E;RF power amplifier;load pull;parasitic inductance;CMOS;bluetooth


  • TP722