Bi4Ti3O12掺杂对低压ZnO压敏电阻性能的影响

›› 2010, Vol. 23 ›› Issue (7): 52-55.

Bi4Ti3O12掺杂对低压ZnO压敏电阻性能的影响

王旭明,曹全喜,惠磊

(西安电子科技大学技术物理学院,陕西西安710071)

出版日期:2010-07-15 发布日期:2010-09-09
通讯作者: 王旭明(1984-),男,硕士研究生。研究方向:ZnO压敏电阻的配方和工艺。
作者简介:王旭明(1984-),男,硕士研究生。研究方向:ZnO压敏电阻的配方和工艺。

Effect of Bi4Ti3O12 Additive on Properties of ZnO LowVoltage Varistors

Wang Xuming,Cao Quanxi,Hui Lei

(School of Technical Physics,Xidian University,Xian 710071,China)

Online:2010-07-15 Published:2010-09-09

摘要/Abstract

摘要：

Bi4Ti3O12在低压氧化锌压敏电阻器的烧结过程中起着重要作用。通过使用扫描电子显微镜(SEM)研究了添加Bi4Ti3O12粉体的陶瓷烧结过程。结果表明,使用纳米Bi4Ti3O12粉体的压敏电阻所获得的电压梯度更低,Zn2TiO4相的形态和分布影响压敏电压的分散性。

关键词: 低压ZnO压敏电阻, Bi4Ti3O12, 晶粒长大

Abstract:

The Bi4Ti3O12 plays an important role in the process of sintering of the lowvoltage zinc oxide varistors.In this article,sintering of ceramic doped with Bi4Ti3O12 is studied by using SEM.The results show that varistors doped with nanometer Bi4Ti3O12 powder can obtain lower breakdown voltage,and the form and distribution of Zn2TiO4 phase affect the uniformity of breakdown voltage.

Key words: lowvoltage zinc oxide varistor;Bi4Ti3O12;grain growth

中图分类号:

TN3042+1

王旭明, 曹全喜, 惠磊. Bi4Ti3O12掺杂对低压ZnO压敏电阻性能的影响[J]. , 2010, 23(7): 52-55.

WANG Xu-Meng, CAO Quan-Chi, HUI Lei. Effect of Bi4Ti3O12 Additive on Properties of ZnO LowVoltage Varistors[J]. , 2010, 23(7): 52-55.