›› 2014, Vol. 27 ›› Issue (11): 160-.

• 论文 • 上一篇    下一篇

CCD曝光工艺常见缺陷及解决办法

高建威,向鹏飞,邓涛,杨修伟,袁安波   

  1. (重庆光电技术研究所 第1研究室,重庆 400060)
  • 出版日期:2014-11-15 发布日期:2014-11-19
  • 作者简介:高建威(1985—),男,工程师。研究方向:CCD工艺研究。E-mail:gjw11434197@163.com

Common Defects in CCD Exposure and their Solution

GAO Jianwei,XIANG Pengfei,DENG Tao,YANG Xiuwei,YUAN Anbo   

  1. (First Research Section,Chongqing Optoelectronic Technology Research Institute,Chongqing 400060,China)
  • Online:2014-11-15 Published:2014-11-19

摘要:

CCD器件曝光过程中会产生各种缺陷,由此会对线宽和图形产生不良影响。文中针对这些缺陷分析了成因并找到相应的解决办法,形成严谨的工艺规范以达到消除缺陷的目的,同时使得工艺能力和成品率得到了显著提升。

关键词: CCD, 曝光, 缺陷, 图形

Abstract:

A variety of defects result during the exposure of CCD device,imposing a negative impact on the line and pattern.In this article,the causes of different defects are analyzed,and relevant solutions are provided to form rigorous process specifications for the elimination of defects,significantly improving make the process capability and yield.

Key words: CCD;exposure;defect;pattern

中图分类号: 

  • TP212.9