›› 2014, Vol. 27 ›› Issue (7): 89-.

• 论文 • 上一篇    下一篇

基于FPGA的F-RAM防掉电设计

任泽宇,郭鹏程,王建超,罗丁利   

  1. (北方通用电子集团有限公司 数字工程部,陕西 西安 710100)
  • 出版日期:2014-07-15 发布日期:2014-07-19
  • 作者简介:任泽宇(1987—),男,硕士研究生。研究方向:数字信号处理算法及FPGA实现。E-mail:rzy870717@163.com

Power Down Protection Design for F-RAM Based on FPGA

REN Zeyu,GUO Pengcheng,WANG Jianchao,LUO Dingli   

  1. (Department of Digital Engineering,North General Electronics Group Co.,Ltd,Xi'an 710100,China)
  • Online:2014-07-15 Published:2014-07-19

摘要:

在复杂实验条件下,需采用非易失性铁电存储器记录重要数据。为防止二次上电时实验数据被覆盖,需设计防掉电功能。文中介绍了一种F-RAM的防掉电设计思路,并基于现场可编程门阵列实现,板级验证工作正常,并已在相关项目中得到应用且达到了预期功能。

关键词: 非易失铁电存储器, 防掉电, 现场可编程门阵列

Abstract:

The F-RAM is required to record important data in experiments under complex conditions.The power down protection function is necessary to prevent the already valid data from being covered on secondary electricity.A design of a power down protection is introduced and realized on FPGA.The design works well on board,and realizes the expected function in related project applications.

Key words: ferroelectric nonvolatile ram;power down protection;field programmable gate array

中图分类号: 

  • TN79