›› 2015, Vol. 28 ›› Issue (3): 136-.

• 论文 • 上一篇    下一篇

p-AlGaN/GaN超晶格做p型层350 nm紫外AlGaN基LED

王丹丹,丁娟,韩孟序,孟锡俊   

  1. (1.西安电子科技大学 宽禁带半导体国家重点实验室,陕西 西安 710071;
    2.中为光电科技有限公司,陕西 西安 710071)
  • 出版日期:2015-03-15 发布日期:2015-03-12
  • 作者简介:王丹丹(1990—),女,硕士研究生。研究方向:宽带GaN基紫外LED工艺优化。E-mail:942016799@qq.com

350 nm AlGaN-based Ultraviolet Light-Emitting-Diode Using p-AlGaN/GaN Superlattice

WANG Dandan,DING Juan,HAN Mengxu,MENG Xijun   

  1. (1.State Key Laboratory of Wide Bandgap Semiconductor Technology,Xidian University,Xi'an 710071,China;
    2.Zoomview Optoelectronic Co.Ltd.,Xi'an 710071,China)
  • Online:2015-03-15 Published:2015-03-12

摘要:

使用p-AlGaN/p-GaN SPSLs作为LED的p型层,在蓝宝石衬底上生长出发光波长为350 nm的AlGaN基紫外LED。[JP+1]由于AlGaN/GaN超晶格的极化效应,使得Mg受主的电离能降低,大幅提高了器件的光学和电学性能。在工作电流为350 mA下发光亮度达到了22.66 mW,相应的工作电压为3.75 V,LEDs的光功率满足了实际应用需求。

关键词: AlGaN基紫外LED, AlGaN GaN超晶格, I V特性

Abstract:

By using p-AlGaN/GaN SPSLs as the p-layer of LED,the peak wavelength of 350 nm AlGaN based UVLED is grown on the sapphire substrate.The AlGaN/GaN superlattice polarization reduces the Mg acceptor ionization,thus greatly improving the LED devices optical and electrical properties.The devices exhibit an output power of 22.66 mW at the current of 350 mA,corresponding to a low forward voltage of only 3.75 V.It means that the optical power of such LEDs is high enough to be used in practical applications.

Key words: AlGaN based UV LED;AlGaN GaN superlattices;I V characteristic

中图分类号: 

  • TN23