［1］Song Aiqun,Huang Yuanqing,Shi Jinchai.Applied Technique and Development Trend of CCD Image Sensor ［C］.ICEMI International Conference,2007:2840-2843.

［2］Suni Paul P.CCD Wafer Scale Integration ［C］.Proceedings of the Annual IEEE International Conference on Wafer Scale Integration,1995:123-133.

［3］Abe Hideshi.Device Technologies for High Quality and Smaller Pixel in CCD and CMOS Image Sensors ［C］.Technical Digest-International Electron Devices Meeting,2004:989-992.

［4］Fife K,El Gamal A,Wong H S P.A 0.5 μm Pixel Frame-Transfer CCD Image Sensor in 110nm CMOS ［C］.IEEE International Electron Devices Meeting,2007:1003-1006.

［5］Theuwissen Albert J P.The Hole Role in Solid-State Imagers ［J］.IEEE Transactions on Electron Devices,2006,53(12):2972-2980.

［6］Grove A S.Physics and Technology of Semiconductors ［M］.Hoboken,NJ:Wiley,1967.

［7］Saks N S.A Technique for Suppressing Dark Current Generated by Interface States in Buried Channel CCD Imagers ［J］.IEEE Electron Device Lett,1980,EDL-1(7):131-133.

［8］Masayuki Furumiya,Keisuke Hatano,Yasutaka Nakashiba,et al.A 1/2-inch 1.3 MPixel Progressive-scan CCD Image Sensor Employing 0.25 μm Gap Single-layer Poly-Si Electrodes ［C］.Digest of Technical Papers-IEEE International Solid-State Circuits Conference,1999:300-301,470.

［9］Masahiro Oda,Takayuki Kaida,Shinichiro Izawa,et al.  A 1/4.5in 3.1 M Pixel FT-CCD with 1.56 μm Pixel Size for Mobile Applications ［C］.IEEE International Solid-State Circuits Conference,2005:346-347,602.

［10］Suntharalingam V,Burke B,Cooper M,et al.Monolithic 3.3 V CCD/SOI-CMOS Imager Technology ［C］.Technical Digest-International Electron Devices Meeting,2000:697-700.

［11］Keisuke Hatano,Masayuki Furumiya,Ichiro Murakami,et al.A 1/3-inch 1.3 M Pixel Single-layer Electrode CCD with a High-frame-rate Skip Mode ［C］.IEEE International Solid-State Circuits Conference,2000:112-113,449.

［12］Le Cam Laurent,Bosiers Jan T,Kleimann Agnes C,et al.A 1/1.8in 3 M Pixel FT-CCD with On-chip Horizontal Sub-sampling for DSC Applications ［C］.Digest of Technical Papers-IEEE International Solid-State Circuits Conference,2002:33-35.

［13］Draijer C,Polderdijk F,Van Der Heide A,et al.A 28 Mega Pixel Large Area Full Frame CCD with 2×2 on-chip RGB Charge-binning for Professional Digital Still Imaging ［C］.Technical Digest-International Electron Devices Meeting,IEDM,2005:807-810.

［14］Jerram P,Pool P,Bell R,et al.The LLLCCD:Low Light Imaging Without the Need of an Intensifier ［C］.Proceedings of SPIE-The International Society for Optical Engineering,2001,4306:178-186.

［15］Kosonocky W F,Yang G,Kabra R K,et al.360×360-element Very High Frame-rate Burst Image Sensor:Design,Operation,Performance ［J］.IEEE Transactions on Electron Devices,1997,44(10):1617-1624.

［16］Etoh T Goji,Poggemann D,Ruckelshausen A,et al.A CCD Image Sensor of 1 M Frames/s for Continuous Image Capturing 103 Frames ［C］.Digest of Technical Papers-IEEE International Solid-State Circuits Conference,2002:46-47,33.

［17］Tamaru M,Inuiya M,Misawa T,et al.Development of New Structure CCD for Digital Still Camera ［J］.ITE Technical Report,1999,23(75):31-36.

［18］Tamm M,Inuiya M.Development of the New Structure CCD Sensor for the High Definition Still Image Capturing Systems ［C］.International Symposium on Multispectral Imaging and Color Reproduction for Digital Archives,1999.

［19］Hiwatashi K.Spatial Sine-wave Responses of the Human Visual System ［J］.Vision Res,1968,8(9):1245-1263.