一种具有N埋层的AlGaN/GaN高电子迁移率晶体管

一种具有N埋层的AlGaN/GaN高电子迁移率晶体管

张飞,林茂,毛鸿凯,苏芳文,隋金池

An AlGaN/GaN High-Electron Mobility Transistor with N-Buried Layer

ZHANG Fei,LIN Mao,MAO Hongkai,SU Fangwen,SUI Jinchi

电子科技 . 2021, (5): 61 -65 . DOI: 10.16180/j.cnki.issn1007-7820.2021.05.011