Electronic Science and Technology ›› 2019, Vol. 32 ›› Issue (2): 1-3.doi: 10.16180/j.cnki.issn1007-7820.2019.02.001

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Study of Dry Etching in 4H-SiC Material

XU Longlai,ZHONG Zhiqin   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
  • Received:2018-01-24 Online:2019-02-15 Published:2019-01-02
  • Supported by:
    National Natural Science Foundation of China(11305029)


Due to the stability of SiC material and the disadvantages of wet etching, dry etching is generally used to etch SiC material. However,the roughness of the etched sample surface caused by dry etching will have a certain impact on the performance of the device. In order to solve the problem, inductively coupled plasma-reactive ion etching (ICP-RIE) was applied to etch SiC material with the mixture of SF6/O2 and SF6/CF4/O2. The effects of pressure, ICP power and gas mixture ratio on the surface roughness of the samples were investigated respectively. The experimental results showed that with use of the mixture of SF6/O2 , the surface roughness was improved. Under certain RIE power, when the ICP power was 700 W, the pressure was 20 mT and SF6/O2 was 50/40 sccm. Meanwhile, the roughness of the sample surface was the minimum.

Key words: silicon carbide, inductively coupled plasma-reactive ion etching, roughness, pressure, power, SF6/O2

CLC Number: 

  • TN305