Electronic Science and Technology ›› 2020, Vol. 33 ›› Issue (1): 51-56.doi: 10.16180/j.cnki.issn1007-7820.2020.01.010

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A AlGaN/GaN Schottky Diode with Anode Connected P-type Buried Layer

SUN Youlei,TANG Jianxiang,WANG Ying,HUANG Yifei,WANG Wenju   

  1. School of Electronics and Information,Hangzhou Dianzi University,Hangzhou 310018,China
  • Received:2018-12-25 Online:2020-01-15 Published:2020-03-12
  • Supported by:
    The Excellent Youth Foundation of Zhejiang Province of China(LR17F040001)


In the traditional AlGaN/GaN Schottky diodes, the anode leakage is an important factor that limits the enhancement of the breakdown voltage of the device.Therefore,aAlGaN/GaN Schottky diode structure with a P-type buried layer grown in the buffer layer and connected to the anode (AC-PBL FPs SBD) was investigated to suppress the anode leakage current. Meanwhile, field plates were added to both anode and cathode to modulate the surface electric field distribution of the device. The simulation proved that the anode leakage current of the structure was effectively suppressed, and the 2DEG in the channel was depleted. The space charge region was enlarged, and the breakdown voltage of the device was improved. The breakdown voltage of this structure was 733 V. Compared with the traditional GET SBD device, the breakdown voltage was increased by nearly 3.4 times, and the Baliga value was improved by nearly 11.6 times, indicating that the device could be applied in power electronic circuits.

Key words: AlGaN/GaN, buriedlayer, breakdownvoltage, figure of merit, fieldplate, on-resistance

CLC Number: 

  • TN312+.3