Electronic Science and Technology ›› 2021, Vol. 34 ›› Issue (5): 61-65.doi: 10.16180/j.cnki.issn1007-7820.2021.05.011

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An AlGaN/GaN High-Electron Mobility Transistor with N-Buried Layer

ZHANG Fei,LIN Mao,MAO Hongkai,SU Fangwen,SUI Jinchi   

  1. School of Electronic and Information,Hangzhou Dianzi University,Hangzhou 310018,China
  • Received:2020-01-07 Online:2021-05-15 Published:2021-05-24
  • Supported by:
    The Excellent Youth Foundation of Zhejiang Province of China(LR17F040001)


In order to further improve the breakdown voltage of GaN HEMT and keep low on-resistance, an AlGaN/GaN HEMT with an N-type GaN buried layer is proposed. The buried layer reduces the peak value of the electric field in the high field region by adjusting the electric field distribution of the device, thereby reducing the leakage current when the device is off-state.The horizontal electric field distribution in channel between the gate and drain is more uniform, which improves the breakdown voltage of device. The Sentaurus TCAD simulation demonstrates that the N-type GaN buried layer can significantly improve the breakdown voltage of the device. The breakdown voltage of the new structure reaches 892 V,which is 68% higher than the 530 V breakdown voltage of the traditional structure. The buried GaN layer has no effect on the on-state characteristics of the device, so that the device retains low on-resistance. These results indicate that the proposed structure has a good application prospect in the field of power devices.

Key words: GaN, HEMT, breakdown voltage, on-resistance, N-buried layer, electric field modulation, TCAD simulation, BFOM, 2DEG

CLC Number: 

  • TN386.3