一种适用于强耦合压电能量采集器的非对称电压接口电路

doi:10.16180/j.cnki.issn1007-7820.2024.12.003

Abstract

Abstract:

The S-SSHI(Series Synchronous Switch Harvesting Interface Circuit), P-SSHI(Parallel Synchronous Switch Harvesting Interface Circuit ), and SECE(Synchronous Charge Extraction Interface Circuit) obtain higher output voltage and harvested power than the FB(Full-Wave Rectifier Bridge) in weakly coupled piezoelectric energy harvesting system. The S-SSHI, P-SSHI, and SECE interface circuits do not have an obvious effect gain on output voltage under strong coupling systems. To solve this problem, an asymmetric voltage interface circuit is proposed in this study. The circuit consists of a single voltage detection switch and a full wave rectifier bridge. When the charging capacitor voltage approaches the open-circuit voltage of the PEH(Piezoelectric Energy Harvester), the PEH voltage begins to be biased. The maximum output voltage of the asymmetric voltage interface circuit is higher than FB because of the bias voltage, so the asymmetric voltage interface circuit can improve the harvested energy. The simulation results of asymmetric voltage interface circuit are consistent with the experimental results. The captured energy of the asymmetric voltage interface circuit is 0.532 J under the strong coupling system. The captured energy of the asymmetric voltage interface circuit is 147% higher than FB and 75% higher than other improved interface circuits.

Key words: piezoelectric energy harvesting, interface circuit, capture energy, captured energy power, asymmetric voltage, series synchronous switch, parallel synchronous switch, synchronous charge extraction

CLC Number:

TN86

SHEN Xingfeng, YUAN Tianchen, YANG Jian, SONG Ruigang. An Asymmetric Voltage Interface Circuit for Strong Coupling Piezoelectric Energy Harvesters[J].Electronic Science and Technology, 2024, 37(12): 17-23.

Figures/Tables 11

Figure 1.

Figure 2.

Table 1.

Table 2.

Major parameters of the asymmetrical voltage interface circuit"

元器件	型号	主要参数
PNP三极管	2N3906	V_BE=-0.7 V,V_CE=-0.25 V
N-MOS	2N7000	$V G S (t h e)$ =3 V
肖特二极管	1N5819	V_D=0.6 V
电感	-	L₂=50 mH
电容	-	C₂=2.2 nF,C₃=2 200 μF
电阻	-	R₂=200 kΩ,R₃=750 kΩ

Table 2.

Table 3.

The comparison of simulated and theoretically calculated voltages of CP,C2 and C3 in the steady state"

类型	V $x C P$ /V	$V C 2$ /V	$V C 3$ /V
理论	23.27	23.04	22.07
仿真	23.27	23.05	22.07

Table 3.

Figure 3.

Figure 4.

Figure 5.

Figure 6.

Figure 7.

Table 4.

References 21

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PEH参数	数值	等效电参数	数值
质量M/kg	0.100 0	电感L₁/H	0.100 0
阻尼C/Ns·m^-1	12.560 0	电阻R₁/Ω	12.560 0
刚度K/kN·m^-1	39 478	电容C₁/μF	25.300 0
电容C_P/nF	48.120 0	电容C_P/nF	48.120 0
机电耦合系数χ/N·V^-1	0.017 1	理想变压比P₁∶S₁	0.017 1

接口电路	仿真俘获能量/J	仿真最大俘能功率/mW	实验俘获能量/J	实验最大俘能功率/mW	元器件数
FB	0.241	1.12	0.216	0.94	5
P-SSHI	0.368	1.64	0.238	1.17	13
S-SSHI	0.227	1.44	0.095	0.41	11
SECE	0.523	0.89	0.303	0.61	11
本文	0.536	0.89	0.532	0.81	11

An Asymmetric Voltage Interface Circuit for Strong Coupling Piezoelectric Energy Harvesters

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