［1］Wanga H X,Jiangb N,Hiraki H,et al.Fabrication of High-performance 407 nm Violet Light-emitting Diode［J］.Journal of Crystal Growth,2004,263:57-61.

［2］刘乃鑫,王怀兵,刘建平,等.p型氮化镓的低温生长及发光二极管器件的研究［J］.物理学报,2006,55(3):1424-1429.

［3］徐波,余庆选,吴气虹,等.应力和掺杂对Mg:GaN薄膜光致发光光谱影响的研究［J］.物理学报,2004,53(1):204-209.

［4］Eliashevich I,Li Y,Osinsky A,et al.InGaN Blue Light-emitting Diodes with Optimized n-GaN layer［J］.Proc.SPIE,1999,3621:28-36.

［5］Ki M H,Park S J,Hwang H.Effects of Current Spreading on the Performance of GaN-based Light-emitting Diodes［J］.IEEE Trans.Electron Devices,2001,48(6):1065-1069.

［6］Hyunsoo Kim,Seong Ju Park,Hyunsang Hwang.Lateral Current Transport Path,A Model for GaN-based Light-emitting Diodes:Applications to Practical Device Designs［J］.Applied Phycics Lettlers,2002,81(7):1326-1328.

［7］Guo X,Schubert E F.Rrent Crowding and Optical Saturation Effects in GaInN/GaN Light-emitting Diodes Grown on Insulating Substrates［J］.Applied Physics Letters,2001,78(21):3337-3339.

［8］Chen Ting,Chen Zhizhong,Lin Liang,et al.Methods for Determining Junction Temperature of GaN-based white LEDs［J］.Chin.J.Lumin,2006,27(3):4072-4074.

［9］Ebong A,Arthur S,Downey E,et al.Device and Circuit Modeling of GaN/InGaN Light Emitting Diodes(LEDs)for Optimum Current Spreading［J］.Solid-State Electronics,2003,47:1817-1823.

［10］沈光地,张剑铭,邹德恕,等.大功率GaN基发光二极管的电流扩展效应及电极结构优化研究［J］.物理学报,2008,57(1):472-476.

［11］Silvaco International.Atlas Users Manual［Z］.4701 Patrick Henry Drive,Building#6 Santa Clara CA:Silvaco Conproation,95054,2007.