［1］Allen P E.CMOS模拟集成电路设计［M］.北京:电子工业出版社,2007.

［2］Behzad Razavi.模拟 CMOS 集成电路设计［M］.陈贵灿,程军,张瑞智,译.西安:西安交通大学出版社,2004.

［3］Tsividis Y P.Accurate Analysis of Temperature Eeffects in IC-VBE Characteristics with Application to Bandgap Reference Sources［C］.IEEE Journal of Solid State Circuits,1980,sc-15(6):1076-1084.

［4］Audy J M.3rd Order Curvature Corrected Bandgap Cell［C］.In Proc.38th Midwest Symp.Circuits and Systems,1996(1):397-400.

［5］Leung K N,Mok P K T,Leung C Y.A 2-V 23-giA 53-ppm/°C Curvature-Compenstated CMOS Bandgap Voltage Reference［J］.IEEE J.Solid-State Circuits,2003,38(3):561-564.

［6］Leung K N,Mok P K T.A Sub-1-V 15-ppm/°C CMOS Bandgap Voltage Reference without Requiring Low Threshold Voltage Device［J］.IEEE J.Solid-State Circuits,2002,37(4):526-530.

［7］Palmisano G,Palumbo G,Pennisi S.Design Procedure for Two-stage CMOS Transconductance Operational Amplifiers:A Tutorial［J］.Analog Integrated Circuits and Signal Processing,2001,27:179-189.

［8］Mallya S,Nevin J.Design Procedures for a Fully Differential Folded-Cascode CMOS Operational Amplifier［J］.IEEE Journal of Solid-State Curcuits,1989,24(6):1737-1740.