垂直多结PPD像素势阱容量与电荷转移研究

Abstract

Abstract:

An 4-T CMOS image sensor pixel with vertical multi-junction structure was investigated.By introducing vertical multi-junction structure can extend the full well capacity of the photosensitive area,the depletion region is increased to improve the collection efficiency of signal charge,especially for long wavelength light absorption greatly increased.And,to reduce the image lag of vertical multi-junction structure,a horizontal gradient doping eliminating the potential barrier,thus,the signal charge easier to pass out,reducing image lag.Its performance was verified by simulation with SILVACO TCAD software.

Key words: CMOS image sensor;full well capacity;charge transfer

CLC Number:

TP212

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LI Tianqi,MA Chaolong,YANG Xiaoliang,DU Bin. Full Well Capacity And Charge Transfer Study for PPD Pixel With Vertical Multi-Junction Structure[J]., 2013, 26(10): 166-.

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URL: https://journal.xidian.edu.cn/dzkj/EN/

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Full Well Capacity And Charge Transfer Study for PPD Pixel With Vertical Multi-Junction Structure

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