›› 2014, Vol. 27 ›› Issue (11): 120-.

• Articles • Previous Articles     Next Articles

Application of a New Type of Insulated Gate Field Effect Transistor MLE20/MJD20 in Class A Power Amplifier

WANG Dongqi   

  1. (Shengli College,China University of Petroleum,Dongying 257000,China)
  • Online:2014-11-15 Published:2014-11-19

Abstract:

A new class A power amplifier based on symmetric complementary differential amplifier circuit is designed and developed in the view of the shortcomings of traditional class A power amplifier with complex and poor circuit.The new power amplifier reduces the output impedance of the power amplifier and improves the driver power and stability of the circuit by adopting MLE20/MJD20 insulated gate FET as its current amplifier tube and by proper design of the parameters in differential input,the voltage amplification and output.

Key words: class a power amplifier;field effect transistor;audio amplifier;MLE20/MJD20

CLC Number: 

  • TN722.5