石墨烯/NiAu复合透明导电层在GaN LED的应用

Abstract

Abstract:

A Ni / Au layer prepared by sputtering method is used as insertion between the graphene and the P-type GaN layer to reduce the contact potential.We study the relationship of the thickness ratio of Ni and Au with GaN LED performance.The results show that under the conditions of 1.5 nm total thickness with the light transmission properties and good ohmic contact in consideration,a Ni and Au thickness ratio of 1 nm/0.5 nm is the best,in which case the Graphene / NiAu composite transparent conductive layer can significantly reduce the operating voltage of the GaN LED with a high light transmittance in the blue band,thereby improving the light emitting properties of the GaN LED.

Key words: graphene;Ni/Au;transparent conductive layer;GaN LED

CLC Number:

TN304

ZHENG Lei, XU Chen, SUN Jie, XU Kun, CHEN Mao-Xin, GE Hai-Liang. Graphene/NiAu Sheets as Transparent Conductive Layer Used in GaN LED[J]., 2014, 27(2): 109-.

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Graphene/NiAu Sheets as Transparent Conductive Layer Used in GaN LED

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