［1］BYEONG U Y,BUEM J K,YANG H S,et al.Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection［J］.Advanced Functional Materials,2012(22):632-639.

［2］HUANG C,MATTHEW T H,KENJI F,et al.Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20) InGaN/GaN quantum wells［J］.Applied Physics Letters,2011,99(3):241115

［3］MISHR A,UMESH K,PARIKH P,et al.AlGaN/GaN HEMTs-an overview of device operation and applications［J］.Proceedings of the IEEE,2002,90(3):1022-1036.

［4］MATSUOKA T,OKAMOTO H,NAKAO M,et al.Optical bandgap energy of urtzite InN［J］.Applied Physics Letters,2007,81(7):1246-1253.

［5］YASUSHI N,YOSHIKI S,TOMOHIRO Y.RF-Molecular beam epitaxy growth and properties of inn and related alloys［J］.Japanese Jouranl of Applied Physics,2003,42(5):2549-2558.

［6］WU J,WALUKIEWICZ W,YU K M,et al.Superior radiation resistance of InxGa1-xN alloys:Full-solar-spectrum photovoltaic material system［J］.Journal of Applied Physics,2002,80(21):3967-3969.

［7］WU Minghsien,CHANG Shengpo,CHANG Shooujinn,et al.Characteristics of GaN/InGaN double-heterostructure photovoltaic cells［J］.International Journal of Photoenergy,2012(1):174-178.

［8］贾文博,李培咸,周小伟,等.MOCVD脉冲生长对InGaN太阳能电池材料的影响［J］.电子科技,2013,26(1):10-11.