Abstract:

The surface blistering kinetics of Ge implanted by H ion based on different implantation conditions is studied for germanium layer transfer to SiO2 to obtain GeOI.The raw Ge surface based on smart-cut technology was etched by chemical solution (mixture of ammonia,H2O2 and deionized water) at room temperature for Ge surface planarizing and removing the amorphous Ge generated by H ion implantation.The characterizations were performed by atomic force microscopy (AFM) and cross-section transmission electron microscopy (X-TEM).The experimental results demonstrate that the surface roughness of the splitting germanium is improved the amorphous Ge layer originated by H implantation is removed while maintaining perfect germanium pattern lattice.

Key words: smart cut technology;germanium surface roughness;germanium surface etching