›› 2018, Vol. 31 ›› Issue (4): 1-.
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YANG Xiaoshan, GUO Xiang, LUO Zijiang, et al.
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Abstract: AbstractDifferent morphology of GaAs(001) surfaces were prepared by reducing the substrates temperature with different contant speed in molecular beam epitaxy(MBE) and scanning tunneling microscope(STM) system, the Effect of rough GaAs (001) surface on the growth of In015Ga085As film was studied and analyzed through scanning probe image processor(SPIP) and Bauer rule, the results show that surface energy was increasing because of numberous islands and pits on the rough GaAs surface, thus the In015Ga085As was apt to form a flat surface by layer growth. compared with the flat GaAs(001) surface with 100×100 nm2, surface energy of the rough GaAs(001) increased by 4.6× 103 eV per,which is larger than the strain energy of 15 ML In015Ga085As film(2.3×103eV),it is shown that the epitaxial growth mode of In015Ga085As film on the surface of rough GaAs (001) is layer-by-layer.
Key words: MBE, STM, GaAs, rough surface, In015Ga085As film , surface energy
CLC Number:
YANG Xiaoshan, GUO Xiang, LUO Zijiang, et al.. Effect of Rough GaAs (001) Surface on the Growth of In015Ga085As Film[J]., 2018, 31(4): 1-.
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https://journal.xidian.edu.cn/dzkj/EN/Y2018/V31/I4/1
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