›› 2018, Vol. 31 ›› Issue (4): 1-.

• Articles •     Next Articles

Effect of Rough GaAs (001) Surface on the Growth of In015Ga085As Film

YANG Xiaoshan, GUO Xiang, LUO Zijiang, et al.   

  1. 1. School of Big Data and Information Engineering,Guizhou University; 2. School of Information,Guizhou University of Finance and Economics
  • Online:2018-04-15 Published:2018-04-04

Abstract: AbstractDifferent morphology of GaAs(001) surfaces were prepared by reducing the substrates temperature with different contant speed in molecular beam epitaxy(MBE) and scanning tunneling microscope(STM) system, the Effect of rough GaAs (001) surface on the growth of In015Ga085As film was studied and analyzed through scanning probe image processor(SPIP) and Bauer rule, the results show that surface energy was increasing because of numberous islands and pits on the rough GaAs surface, thus the In015Ga085As was apt to form a flat surface by layer growth. compared with the flat GaAs(001) surface with 100×100 nm2, surface energy of the rough GaAs(001) increased by 4.6× 103 eV per,which is larger than the strain energy of 15 ML In015Ga085As film(2.3×103eV),it is shown that the epitaxial growth mode of In015Ga085As film on the surface of rough GaAs (001) is layer-by-layer.

Key words: MBE, STM, GaAs, rough surface, In015Ga085As film , surface energy

CLC Number: 

  • TN3