›› 2013, Vol. 26 ›› Issue (10): 98-.

• Articles • Previous Articles     Next Articles

New Structure to Alleviate Current Filamentation at the Edge Termination of High-Voltage FRDs during Dynamic Avalanche

WU Licheng,WU Yu,WEI Feng,JIA Yunpeng,HU Dongqing,JIN Rui,ZHA Yiying   

  1. (1.School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China;]2.Electrical Engineering New Materials and Microelectronics Institute,State Grid Intelligence Academy,Beijing 100192,China)
  • Online:2013-10-15 Published:2013-10-23


Dynamic avalanche is a major factor which affects the ruggedness of high-voltage silicon power bipolar devices,e.g.the high-voltage fast recovery diode (FRD).In this paper,a simulation to compare the dynamic avalanche characteristics of two high-voltage FRDs with different edge terminations is presented.Simulation results show that a high-voltage FRD with VLD (variation of lateral doping) structure has better dynamic avalanche immunity than that with JTE (junction termination extension).A new structure for the FRD with JTE to alleviate the current filament at the edge termination during dynamic avalanche is proposed and its effectiveness is simulated and demonstrated.In this structure the resistance area is created by the P buffer area of the P+/P anode.Simulation results show that the current filament can be well alleviated.

Key words: FRD;dynamic avalanche;current filament;terminations

CLC Number: 

  • TN312+.4