›› 2013, Vol. 26 ›› Issue (10): 166-.

• Articles • Previous Articles     Next Articles

Full Well Capacity And Charge Transfer Study for PPD Pixel With Vertical Multi-Junction Structure

LI Tianqi,MA Chaolong,YANG Xiaoliang,DU Bin   

  1. (College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China)
  • Online:2013-10-15 Published:2013-10-23


An 4-T CMOS image sensor pixel with vertical multi-junction structure was investigated.By introducing vertical multi-junction structure can extend the full well capacity of the photosensitive area,the depletion region is increased to improve the collection efficiency of signal charge,especially for long wavelength light absorption greatly increased.And,to reduce the image lag of vertical multi-junction structure,a horizontal gradient doping eliminating the potential barrier,thus,the signal charge easier to pass out,reducing image lag.Its performance was verified by simulation with SILVACO TCAD software.

Key words: CMOS image sensor;full well capacity;charge transfer

CLC Number: 

  • TP212