›› 2014, Vol. 27 ›› Issue (5): 26-.

• Articles • Previous Articles     Next Articles

Study on Surface Dark Current of CCD

LEI Renfang,WANG Yan,GAO Jianwei,ZHONG Yujie   

  1. (No.1 Research Room,Chongqing Optoelectronics Research Institute,Chongqing 400060,China)
  • Online:2014-05-15 Published:2014-05-14


The temperature characteristic and γ radiation characteristic of surface dark current of CCD is investigated.The results indicate that surface dark current is primary resource of CCD dark current and primary influencing factor of CCD dark current nonuniformity.Interface state density located Si-SiO2 interface increased with γ radiation dose,considerably increased surface dark current.That is primary influencing factor of increase on the CCD dark current after γ radiation.

Key words: CCD;surface dark current;interface state density;temperature;radiation

CLC Number: 

  • TN386.5