Abstract:

The practice process of static induction transistor (SIT) stays ahead of theoretical research.A theoretical research on the electrical performance of the SIT based on Silicon by is performed from the point of device simulation using the Silvaco Tcad software.The results show that the IV performance of the device is the class pentode saturation characteristic,with a device current of about 10-5 A and prepinch off channel state at about 0 V reverse bias gate voltage and 0~20 V drain voltage.Secondly,under the condition of -1.5 V reverse bias gate voltage and 0~300 V drain voltage,the IV performance of the device shows the class triode unsaturated characteristic curve,with a device current of approximately 10-6 A and completely pinched off channel.

Key words: static induction transistor;channel barrier;device simulation