［1］Edward W Scheckler,Andrew R Neureuther.Models and Algorithms for Three-Dimensional Topography Simulation with SAMPLE-3D［J］.IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,1994,13(2):219-230.

［2］Moniwa A,Matsuzawa T,Ito T,et al.A Three-dimensional Photoresist Imaging Process Simulator for Strong Standing-Wave Effect Environment［J］.IEEE Tran.Computer-Aided Design,1987,CAD-6:431-437.

［3］Masato Fujinaga,Norihiko Kotani.3-D Topography Simulator(3-D MULSS)Based on a Physical Description of Material Topography［J］.IEEE Transactions on Electron Devices,1997,44(2):226-238.

［4］Oldham G,Neureuther A R,Sung C,et al.A GeneralSimulator for VLSI Lithography and Etching Processes—Part II:Application to Deposition and Etching［J］.IEEE Trans.Electron Devices,1980,ED-27:1455.

［5］Masato Fujinaga,Norihiko Kotani,Tatsuya Kunikiyo,et al.Three-Dimensional Topography Simulation Model:Etching and Lithography［J］.IEEE Transactions on Electron Devices,1990,37(10):2183-2192.

［6］张鉴,黄庆安,李伟华.电感耦合等离子体(ICP)深刻蚀的模型与模拟［J］.仪器仪表学报,2006,27(10):1342-1346.

［7］张鉴,黄庆安,李伟华.一种可用于Footing效应模拟的ICP刻蚀模型［J］.仪器仪表学报,2007,28(12):2169-2173.

［8］张鉴,何晓雄,刘成岳,等.基于线算法的ICP 深反应离子刻蚀模型［J］.真空科学与技术学报,2008,28(5):481-485.

［9］Chahoud M.Etching Simulation of Negative Sloped Planes at Convex Mask Corners in Si［J］.Sensors and Actuators,2005,A 117:356-363.

［10］Bean K E.Anisotropic Etching of Silicon［J］.IEEE Trans.Electron.Dev.ED-25,1978:1185-1193.