［1］BASU J S,DIVAKAR R,NOWAK J,et al.Structure and growth mechanism of ZnSe nanowires ［J］.J.Appl Phys,2008,104(6):064302-064310.

［2］WANG H T,TIAN T,YAN S C,et al.Large-scale synthesis of ZnSe nanoribbons on zinc substrate ［J］.J.Cryst.Growth,2009,311(14):3787-3791.

［3］Lü R T,CAO C B,ZHAI H Z,et al.Growth and characterization of single-crystal ZnSenanorods via surfactant soft-template method ［J］.Solid State Communication,2004,130(3-4):241-245.

［4］SONG H S,ZHANG W J,YUAN G D,et al.P-type conduction in arsenic-doped ZnSe nanowires ［J］.Appl Phys Lett,2009,95(3):033117-033120.

［5］REN J,BOWERS K,SNEED B,et al.ZnSe light-emitting diodes ［J］.Appl Phys Lett,1990,57(18):1901-1903.

［6］SOROKIN E,SOROKINA I T.Tunable diode-pumped continuous-wave Cr［sup 2+］:ZnSe laser ［J］.Appl Phys Lett,2002,80(18):3289-3293.

［7］CHIN P T K,STOUWDAM J W,JANSSEN R A J.Highly luminescent ultranarrow mn doped ZnSe nanowires ［J］.Nano Lett,2009,9(2):745-750.

［8］ZHANG X T,IP K M,LI Q,et al.Photoluminescence of Ag-doped ZnSe nanowires synthesized by metalorganic chemical vapor deposition ［J］.Appl Phys Lett,2005,86(20):203114-203117.

［9］XI B J,XU D C,XIONG S L,et al.Preparation and characterization of cubic and hexagonal polytypes of ZnSe:Cu2+one-dimensional nanostructures ［J］.J.Phys.Chem.C,2008,112(14):5333-5338.

［10］ZHANG X W,JIE J S,WANG Z,et al.Surface induced negative photoconductivity in p-type ZnSe:Bi nanowires and their nano-optoelectronic applications ［J］.J.Mater.Chem,2011,21(18):6736-6741.

［11］LEUNG Y P,CHOY W C H,YUK T I.Linearly resistive humidity sensor based on quasi one-dimensional ZnSe nanostructures ［J］.Chem Phys Lett,2008,457(1-3):198-201.

［12］FANG X S,XIONG S G,ZHAI T Y,et al.High-performance blue/ultraviolet-light-sensitive ZnSe-nanobelt photodetectors ［J］.Adv.Mater,2009,21(48):5016-5022.