Abstract:

In this paper,the methods of InGaN alloy growth are compared.It is found that by conventional method the InGaN alloy tends to have a higher component because of a higher concentration of In atoms in the chamber but results in a poor crystallization quality as the pre-reaction.The one grown by pulse method tends to have a lower component of In and In drop because of a lower concentration of In atoms in the chamber but results in a good crystallization quality as the reduction of pre-reaction.

Key words: InGaN;pulse method;solar cells;MOVCD