一种Si CMOS的Ka波段毫米波功率放大器

doi:10.19665/j.issn1001-2400.2021.02.024

摘要/Abstract

摘要：

为了满足毫米波雷达或通信系统对更高发射功率的需求,基于65 nm Bulk Si CMOS工艺制程设计了一款Ka频段功率放大器。该功率放大器工作于30~32 GHz,采用了共源共栅差分对结构的两级放大单元,使用中和电容增强电路的稳定性,并以变压器为基础设计实现了片上无源阻抗匹配网络。经过测试,该功率放大器在工作频段内的最大输出功率为16.3 dBm。当功率放大器过驱动时,其最大功率附加效率为16.9 %,-1 dB压缩点为13.2 dBm,功率增益为23.6 dB。这种功率放大器芯片在功率增益和芯片面积利用率方面具有优势,为硅基毫米波功率放大器提供了一种可行的高功率输出的设计实例。

关键词: CMOS集成电路, 毫米波, 功率放大器, 微波单片集成电路

Abstract:

In order to meet the requirement of higher transmission power for the millimeter wave radar or communication system,a Ka band power amplifier is designed based on the 65 nm bulk Si CMOS process.This power amplifier works at 30~32 GHz ,and consists of two-stage CASCODE differential pairs structure amplifiers.Neutralizing capacitances are used to enhance its stability,and the on chip matching network is realized based on transformer coils.After testing,the maximum output power of the power amplifier in the operating frequencies is 16.3 dBm.Its maximum PAE is 16.9 %,-1 dB compression point is 13.2 dBm,and power gain is 23.6 dB.The power amplifier chip presented in this paper has advantages in power gain and chip area utilization,which provides a feasible high power output design example for the silicon-based millimeter wave power amplifier.

Key words: CMOS integrated circuits, millimeter waves, power amplifiers, monolithic microwave integrated circuit

中图分类号:

TN722.7

陶李,田彤. 一种Si CMOS的Ka波段毫米波功率放大器[J]. 西安电子科技大学学报, 2021, 48(2): 190-196.

TAO Li,TIAN Tong. Si CMOS Ka-band millimeter wave power amplifier[J]. Journal of Xidian University, 2021, 48(2): 190-196.

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参考文献 19

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参数	文献[15]	文献[16]	文献[17]	文献[18]	文献[19]		文中工作
工作电压/V	2.8	1.0	1.2	3.0	2.0		1.2
工艺尺寸	22 nm FDSOI	28 nm Bulk	90 nm Bulk	65 nm Bulk	45 nm Bulk		65 nm Bulk
Topology	3-stack	TF-based Doherty	TF-based Doherty	TF-based ClassAB	TF-based ClassF/F-1	TF-based ClassF/F-1	TF-based ClassAB
工作频率/GHz	28.5	32.0	34.0	32.0	37.0	37.0	31.0
P_sat/dBm	18.8	19.8	20.7	15.3	18.6	18.9	16.3
PAE_max/%	23.4	21.0	32.7	32.9	40.2	37.0	16.9
P_{1 dB}/dBm	14.9	16.0	18.5	12.9	16.3	17.0	13.2
G_ain/dB		22.0	19.8	20.8			23.6
芯片的面积/mm²*	0.11	0.59	0.20	0.11	0.14	0.21	0.09