一种宽温度范围的低温度系数带隙基准源设计

doi:10.19665/j.issn1001-2400.2021.04.012

西安电子科技大学学报 ›› 2021, Vol. 48 ›› Issue (4): 91-96.doi: 10.19665/j.issn1001-2400.2021.04.012

• 信息与通信工程&电子科学与技术 • 上一篇下一篇

一种宽温度范围的低温度系数带隙基准源设计

安景慧(),吴晨健()

苏州大学电子信息学院,江苏苏州 215000

收稿日期:2020-05-11 出版日期:2021-08-30 发布日期:2021-08-31
通讯作者: 吴晨健
作者简介:安景慧(1995—),女,苏州大学硕士研究生,E-mail: jhan2@stu.suda.edu.cn
基金资助:
国家自然科学基金(61801321)

Design of a low temperature coefficient bandgap reference with a wide temperature range

AN Jinghui(),WU Chenjian()

School of Electronic and Information Engineering,Soochow University,Suzhou 215000,China

Received:2020-05-11 Online:2021-08-30 Published:2021-08-31
Contact: Chenjian WU

摘要/Abstract

摘要：

为了满足不同应用和市场对物联网芯片精度和可靠性的要求,提出了一款宽温度范围的低温度系数带隙基准源。在传统的Banba型带隙基准源结构上,采用高阶温度补偿技术和分段温度补偿技术改善输出基准电压的曲率,降低了电路的温度系数,同时扩展了电路的工作温度范围。基于TSMC 180 nm CMOS工艺,完成了电路性能验证。测试结果表明,电路在-40 ℃~160 ℃温度范围内的温度系数低至7.2×10^-6/℃,低频时电源抑制比为-48.52 dB,1.8 V电源电压下电路的静态电流为68.38 μA,芯片核心面积为0.025 mm²。

关键词: 带隙基准源, 低温度系数, 宽温度范围

Abstract:

In order to meet the requirements of different applications and markets for the accuracy and reliability of IoT chips,a low temperature coefficient bandgap reference with a wide temperature range is proposed.On the basis of the traditional Banba bandgap reference structure,the circuit utilizes high-order temperature compensation technology and piecewise temperature compensation technology to improve the curvature of the output reference voltage.The temperature coefficient of the circuit is reduced.At the same time,the operating temperature range of the circuit is extended.The circuit performances are verified in the TSMC 180 nm CMOS process.Test results show that the temperature coefficient of the circuit is as low as 7.2×10^-6/℃ in the range of-40 ℃ to 160 ℃.The power supply rejection ratio at a low frequency is -48.52 dB.The static current under the 1.8 V power supply voltage is 68.38 μA,and the core area of the chip is 0.025 mm².

Key words: bandgap reference, low temperature coefficient, wide temperature range

中图分类号:

TN433

安景慧,吴晨健. 一种宽温度范围的低温度系数带隙基准源设计[J]. 西安电子科技大学学报, 2021, 48(4): 91-96.

AN Jinghui,WU Chenjian. Design of a low temperature coefficient bandgap reference with a wide temperature range[J]. Journal of Xidian University, 2021, 48(4): 91-96.

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参考文献 14

[1]	ZHU G Q, YANG Y, ZHANG Q D. A 4.6 ppm/℃ High-Order Curvature Compensated Bandgap Reference for BMIC[J]. IEEE Transactions on Circuits and Systems II:Express Briefs, 2018, 66(9):1492-1496. doi: 10.1109/TCSII.8920
[2]	WANG R, LU W, ZHAO M, et al. A Sub-1 ppm/℃ Current-Mode CMOS Bandgap Reference with Piecewise Curvature Compensation[J]. IEEE Transactions on Circuits and Systems I:Regular Papers, 2017, 65(3):904-913. doi: 10.1109/TCSI.2017.2771801
[3]	LIAO L, LOHAUS L, ATAC A, et al. A Low Power Bandgap Voltage Reference Circuit with PSRR Enhancement[C]//Proceedings of the PRIME 2012 8th Conference on Ph.D.Research in Microelectronics and Electronics.Piscataway:IEEE, 2012:1-4.
[4]	ABBASIZADEH H, CHO S H, YOO S S, et al. Accurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of -118 dB[J]. Journal of Semiconductor Technology and Science, 2016, 16(4):528-523. doi: 10.5573/JSTS.2016.16.4.528
[5]	DUAN J, ZHU Z, DENG J, et al. A Novel 0.8V 79 nW CMOS-Only Voltage Reference with -55 dB PSRR@100 Hz[J]. IEEE Transactions on Circuits and Systems II:Express Briefs, 2017, 65(7):849-853. doi: 10.1109/TCSII.2017.2728700
[6]	LU T, KER M, ZAN H. A 70 nW,0.3 V Temperature Compensation Voltage Reference Consisting of Subthreshold MOSFETs in 65nm CMOS Technology[C]//Proceedings of the 2016 International Symposium on VLSI Design,Automation and Test (VLSI-DAT).Piscataway:IEEE, 2016:1-4.
[7]	LEE I, SYLVESTER D, BLAAUW D. A Subthreshold Voltage Reference with Scalable Output Voltage for Low-Power IoT Systems[J]. IEEE Journal of Solid-State Circuits, 2017, 52(5):1443-1449. doi: 10.1109/JSSC.2017.2654326
[8]	PARISI A, FINOCCHIARO A, PAPOTTO G, et al. Nano-Power CMOS Voltage Reference for RF-Powered Systems[J]. IEEE Transactions on Circuits and Systems II:Express Briefs, 2018, 65(10):1425-1429. doi: 10.1109/TCSII.2018.2857626
[9]	BANBA H, SHIGA H, UMEZAUA A, et al. A CMOS Bandgap Reference Circuit with Sub-1 V Operation[J]. IEEE Journal of Solid-State Circuits, 1999, 34(5):670-674. doi: 10.1109/4.760378
[10]	YANNIS P. Accurate Analysis of Temperature Effects in IC-VBE Characteristics with Application to Bandgap Reference Sources[J]. IEEE Journal of Solid-State Circuits, 1980, 6:1076-1083.
[11]	BILL M, YU F Q. A Novel 1.2 V 4.5 ppm/℃ Curvature-Compensated CMOS Bandgap Reference[J]. IEEE Transactions on Circuits Systems I:Regular Papers, 2014, 61(4):1026-1035. doi: 10.1109/TCSI.2013.2286032
[12]	ZHU Z, HU J, WANG Y. A 0.45 V,Nano-Watt 0.033% Line Sensitivity MOSFET-Only Sub-Threshold Voltage Reference with No Amplifiers[J]. IEEE Transactions Circuits Systems I:Regular Papers, 2016, 63(9):1370-1380. doi: 10.1109/TCSI.2016.2576643
[13]	DUAN Q Z, WANG X, HUANG S M, et al. 0.55~1.8 V,7.5 nW,225.5 mV,CMOS-Only Subthreshold Voltage Reference[J]. Electronics Letters, 2019, 55(6):306-308. doi: 10.1049/ell2.v55.6
[14]	ZHANG H, LIU X, ZHANG J, et al. A Nano-Watt MOS-Only Voltage Reference with High-Slope PTAT Voltage Generators[J]. IEEE Transactions on Circuits and Systems II:Express Briefs, 2018, 65(1):1-5. doi: 10.1109/TCSII.8920

参数	本设计	文献[6]	文献[8]	文献[12]	文献[13]	文献[14]
工艺/nm	180	65	130	180	180	180
输出参考电压/mV	302.05	168	800	118.41	225.5	756
电源电压/V	1.8	3	1.1	0.45	0.55	1
功耗/μW	123.08	29 100	0.027 5	0.015 6	0.075	0.023
温度范围/(℃)	-40~160	-20~100	-40~85	-40~85	-20~80	-40~125
温度系数/(×10^-6/℃)	7.2	36.9	100	59.4	21.9	74
电源抑制比/dB	-48.52			-50.3		-52
	@1 KHz			@100 Hz		@100 Hz
面积/mm²	0.025	0.23	0.003	0.013 2		0.016 2

一种宽温度范围的低温度系数带隙基准源设计

Design of a low temperature coefficient bandgap reference with a wide temperature range

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