一种砷化镓工艺的双向真时延芯片设计

doi:10.19665/j.issn1001-2400.2023.01.012

摘要/Abstract

摘要：

采用0.25 μm GaAs pHEMT E/D工艺实现了X/ Ku波段的双向真时延芯片的设计。通过在新型长号型延时结构中增加双向选择开关,实现了低插入损耗波动的双向数控可调真时延电路。其延时单元采用四阶和二阶电感耦合全通滤波器实现,单位面积下具有较高的延时量,并通过双向有源开关选择延时路径来控制延时大小。延时芯片的工作带宽为6~18 GHz,可实现3位延时,最小延时步进为15 ps,最大延时范围为106 ps。仿真结果表明,其具有相对较低的插入损耗8.1 ~ 15 dB,且损耗随时延的波动小于±2 dB。芯片尺寸为1.91 mm²,群时延均方根误差小于10 ps,回波损耗大于15 dB,直流功耗为110 mW,输入1 dB压缩点大于7 dBm。

关键词: 真时延, 延时电路, 砷化镓, 全通滤波器, 低插入损耗波动

Abstract:

An X/Ku-band bi-directional True-time delay is presented in 0.25 μm GaAs pHEMT E/D technology.The bi-directional operation is realized by adding two-way selecting switches to the new trombone structure,and it has the advantage of low insertion loss variation among different delay states.Fourth-order and second-order inductive coupled all-pass networks are adopted to form two delay lines.The delay differences are controlled by selecting the delay path through the bi-directional active switches.The true-time delay operates with the bandwidth of 6~18 GHz,and it realizes a 3-bit delay with a minimal delay step of 15 ps and a maximal delay of 106 ps.Simulation results show insertion loss of 8.1~15 dB and the loss variation with delay is ±2 dB.The group delay Root-Mean-Square error less than 10 ps and return loss more than 15 dB are implemented with the chip size of 1.91 mm².The direct current consumption is 110 mW and the input P1dB is more than 7 dBm.

Key words: time delay, delay circuit, gallium arsenide, all-pass filters, low loss variation with delay

中图分类号:

TN432

郝东宁,张为. 一种砷化镓工艺的双向真时延芯片设计[J]. 西安电子科技大学学报, 2023, 50(1): 102-108.

HAO Dongning,ZHANG Wei. GaAs bidirectional true time delay chip design[J]. Journal of Xidian University, 2023, 50(1): 102-108.

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参考文献 19

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参数	文献[12]	文献[11]	文献[9]	文献[19]^**	文中^*
工艺	0.18 μm CMOS	0.13 μmCMOS	0.13 μm SiGe	0.25μmGaAs	0.25 μm GaAs
带宽/GHz	8~18	1~21	2~20	6-18	6~18
架构	新型长号型	传统长号型	有源双刀双掷开关路径选择型	单刀双掷开关路径选择型	新型长号型
双向工作	不能	不能	能	能	能
延时单元结构	二阶电容/四阶电感全通滤波器	二阶电感全通滤波器	感电容人工传输线	电感电容人工传输线	二阶电感/四阶电感全通滤波器
延时位数/bit	3	3	6	8	3
最大延时/ps	109.3	274.0	508.0	255.0	106.0
分辨率/ps	15.60	34.25	4.00	1.00	15.00
均方根误差/ps	<4		<10	<1.7	<10
端口匹配/dB	-14.5	-12.0		-12.0	-14.0
插入损耗/dB	18.2~22.5	7.0~22.0	0.0~7.2		8.1~15.0
插入损耗波动/dB	±1.0	±4.5	±3.6	-8.0	±2.0
输入1dB压缩点/dBm	>10.3	>-2.5			>7.0
供电电压/V	3.3	1.2	2.5	5.0	5.0
直流功耗/mW	44.2	6.2	285.0	1 600.0	110.0
面积/mm²	0.690	0.515	1.288	20.000	0.880