AlGaN/GaN异质结中二维电子气多子带解析建模

doi:10.3969/j.issn.1001-2400.2011.05.024

J4 ›› 2011, Vol. 38 ›› Issue (5): 147-151.doi: 10.3969/j.issn.1001-2400.2011.05.024

AlGaN/GaN异质结中二维电子气多子带解析建模

刘红侠;卢风铭;王勇淮;宋大建;武毅

(西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2010-08-27 出版日期:2011-10-20 发布日期:2012-01-14
通讯作者: 刘红侠
作者简介:刘红侠(1968-)，女，教授．E-mail: hxliu@mail.xidian.edu.cn
基金资助:
国家自然科学基金资助项目(60976068,61076097);教育部科技创新工程重大项目培育基金资助项目(708083);十二五国家部委预研资助项目(513080401)

Multiple sub-bands analytical model of 2DEG properties in the Al_xGa_1-xN/GaN heterostructure

LIU Hongxia;LU Fengming;WANG Yonghuai;SONG Dajian;WU Yi

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2010-08-27 Online:2011-10-20 Published:2012-01-14
Contact: LIU Hongxia

摘要/Abstract

摘要：

为了能够方便精确地研究Al_xGa_1-xN/GaN异质结中二维电子气性质，提出一种多子带二维电子气的解析模型．利用此模型能够求出二维电子气能带、子能级、波函数和量子特性的解析解．通过模型计算还可以得到二维电子气的分布变化、面电子密度、基带能级、费米能级和势阱随Al组分及AlGaN层厚度的改变．与泊松-薛定谔自洽求解结果相比较，此模型能够给出精确的结论，并避免了泊松-薛定谔自洽求解复杂的数值计算和耗时长等缺点．

关键词: Al_xGa_1-xN/GaN/GaN异质结, 二维电子气, 多子带模型, 能级分布

Abstract:

To analyze a nitride heterostructure using a simple method, an analytic model is developed for the AlGaN/GaN heterostructure to study two-dimensional electron gas (2DEG) properties. The model is analytical for the energy band, sub-band level and wave function of 2DEG. A comparison of analytical results with complex self-consistent results of the Poisson-Schrodinger equation shows that the complicated numerical calculation and the disadvantage of time-consuming are avoided. We can obtain the variety of 2DEG distribution and sheet density and the shape of the potential well with Al content and thickness of the AlGaN barrier layer using the analytic model.

Key words: AlGaN/GaN heterostructure, two-dimensional electron gas, multiple sub-bands model, distribution of energy level

刘红侠;卢风铭;王勇淮;宋大建;武毅. AlGaN/GaN异质结中二维电子气多子带解析建模[J]. J4, 2011, 38(5): 147-151.

LIU Hongxia;LU Fengming;WANG Yonghuai;SONG Dajian;WU Yi. Multiple sub-bands analytical model of 2DEG properties in the Al_xGa_1-xN/GaN heterostructure[J]. J4, 2011, 38(5): 147-151.

参考文献

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AlGaN/GaN异质结中二维电子气多子带解析建模

Multiple sub-bands analytical model of 2DEG properties in the Al_xGa_1-xN/GaN heterostructure

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AlGaN/GaN异质结中二维电子气多子带解析建模

Multiple sub-bands analytical model of 2DEG properties in the AlxGa1-xN/GaN heterostructure

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Multiple sub-bands analytical model of 2DEG properties in the Al_xGa_1-xN/GaN heterostructure