J4 ›› 2011, Vol. 38 ›› Issue (6): 37-43+96.doi: 10.3969/j.issn.1001-2400.2011.06.006

• 研究论文 • 上一篇    下一篇



  1. (西安电子科技大学 宽禁带半导体材料与器件教育部重点实验室,陕西 西安  710071)
  • 收稿日期:2010-09-21 出版日期:2011-12-20 发布日期:2011-11-29
  • 通讯作者: 马格林
  • 作者简介:马格林(1974-),女,西安电子科技大学博士研究生,E-mail: magreenemagl@163.com
  • 基金资助:


New quality evaluation technique for the SiC epilayer

MA Gelin;ZHANG Yuming;ZHANG Yimen;MA Zhongfa   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2010-09-21 Online:2011-12-20 Published:2011-11-29
  • Contact: MA Gelin


由于当前多种技术同时被用于碳化硅(SiC)外延层质量表征,造成外延层和器件研制成本高、时间长、易损伤、不能在线检测等,限制了SiC外延材料和器件的发展.用红外镜面反射谱、拉曼散射谱、X射线衍射、原子力显微镜和X射线光电子能谱等对4H-SiC外延层质量进行了测试.测试结果的分析和比较表明,红外镜面反射谱不但能提供拉曼散射谱、X射线衍射、原子力显微镜和X射线光电子能谱等测试的所有质量参数,而且其解析结果与其他几种技术的解析结果一致.因此,红外镜面反射谱可以作为一种低成本、快捷、无损、可在线的碳化硅外延层质量监测技术 .

关键词: 碳化硅, 外延层, 质量评估, 红外镜面反射谱


Considering that many characterization techniques used to evaluate the quality properties of the Silicon Carbide (SiC) epilayer result in high cost, long time, easy damage and being unable to carry out on-line test, the Infrared Specular Reflection (IRSR) Spectroscopy, Raman Scattering (RS) Spectroscopy, X-Ray Diffraction (XRD), Atom Force Microscopy(AFM) and X-ray Photoelectron energy Spectroscopy (XPS) are used to study the quality test of the 4H-SiC wafer. Results show that the IRSR spectrum can provide not only the quality parameters offered by RS, XRD, AFM and XPS but also agree with the comprehensive results from them. It is demonstrated that ISRS can be used as a low cost, rapid, non-destructive and on-line monitoring technique for the quality control of the SiC epilayer.

Key words: SiC, epilayer, quality evaluation, infrared specular reflection spectroscopy


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