表面Ge沟道pMOSFET阈值电压模型

doi:10.3969/j.issn.1001-2400.2012.04.017

J4 ›› 2012, Vol. 39 ›› Issue (4): 94-97+113.doi: 10.3969/j.issn.1001-2400.2012.04.017

表面Ge沟道pMOSFET阈值电压模型

戴显英;李志;张鹤鸣;郝跃;王琳;查冬;王晓晨;付毅初

(西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2011-12-01 出版日期:2012-08-20 发布日期:2012-10-08
通讯作者: 戴显英
作者简介:戴显英(1961-)，男，教授，E-mail: xydai@xidian.edu.cn．
基金资助:
国家重点基础研究发展计划(973)资助项目(6139801-1)

Threshold voltage model of the surface Ge channel pMOSFET

DAI Xianying;LI Zhi;ZHANG Heming;HAO Yue;WANG Lin;ZHA Dong;WANG Xiaochen;FU Yichu

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2011-12-01 Online:2012-08-20 Published:2012-10-08
Contact: DAI Xianying

摘要/Abstract

摘要：

基于MOS器件的短沟道效应和漏致势垒降低效应理论，通过求解泊松方程，建立了表面Ge沟道pMOSFET的阈值电压模型．基于该模型对表面Ge沟道MOSFET器件的沟道长度、栅氧化层厚度、衬底掺杂浓度、SiGe虚拟衬底中的Ge含量等结构参数以及漏源电压对阈值电压的影响进行了模型模拟分析．模拟结果表明，当沟道长度小于200nm时，短沟道效应和漏致势垒降低效应对阈值电压影响较大，而当沟道长度超过500nm时，短沟道效应和漏致势垒降低效应对阈值电压的影响可以忽略．模型计算结果与实验结果吻合较好．

关键词: 阈值电压模型, Ge沟道pMOSFET, 漏致势垒降低效应, 短沟道效应

Abstract:

An analytical model of the threshold voltage of the Ge channel pMOSFET is developed by solving Poisson's equation for the first time. The short channel effect(SCE) and drain induced barrier lower(DIBL) are in corporated into the model. Simulated results show satisfactory agreement with experimental data. Simulated results also show that the channel length, Ge content, substrate doping concentration, and gate oxide thickness affect the threshold voltage greatly. Simulation results show that, when the channel length is less than 200nm, the SCE and DIBL affect to threshold voltage greatly, and when the channel length is more than 500nm, the effect of the SCE and DIBL on the threshold voltage can be ignored.

Key words: threshold voltage, Ge channel pMOSFET, DIBL, SCE

戴显英;李志;张鹤鸣;郝跃;王琳;查冬;王晓晨;付毅初. 表面Ge沟道pMOSFET阈值电压模型[J]. J4, 2012, 39(4): 94-97+113.

DAI Xianying;LI Zhi;ZHANG Heming;HAO Yue;WANG Lin;ZHA Dong;WANG Xiaochen;FU Yich. Threshold voltage model of the surface Ge channel pMOSFET[J]. J4, 2012, 39(4): 94-97+113.

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表面Ge沟道pMOSFET阈值电压模型

Threshold voltage model of the surface Ge channel pMOSFET

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