一种新型无源UHF RFID带隙基准电路

doi:10.3969/j.issn.1001-2400.2013.02.024

J4 ›› 2013, Vol. 40 ›› Issue (2): 148-152+200.doi: 10.3969/j.issn.1001-2400.2013.02.024

一种新型无源UHF RFID带隙基准电路

杜永乾;庄奕琪;李小明;景鑫;戴力

(西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2011-11-08 出版日期:2013-04-20 发布日期:2013-05-22
通讯作者: 杜永乾
作者简介:杜永乾(1982-)，男，西安电子科技大学博士研究生，E-mail: duyongqian1982@gmail.com．
基金资助:
中央高校基本科研业务费专项基金资助项目(K50510250011)

New type bandgap reference for UHF RFID tag

DU Yongqian;ZHUANG Yiqi;LI Xiaoming;JING Xin;DAI Li

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2011-11-08 Online:2013-04-20 Published:2013-05-22
Contact: DU Yongqian

摘要/Abstract

摘要：

设计了一种适用于无源超高频射频识别芯片的电流模带隙基准电路，其中负温度系数电流利用BJT管的基射极电压的负温度特性产生，正温度系数电流利用偏置在亚阈值区的MOS器件其漏源电流与栅源电压呈指数关系的特性产生．该基准电路采用TSMC 0.18μm工艺库仿真并投片验证，基准电压的绝对值偏差最大不超过1.75％．测试结果表明，该电路功耗仅为0.65μW，最低工作电压为0.829V，温度系数为±63×10^-6/℃，芯片有效面积为0.04mm²．该基准电路已成功应用于一款无源超高频射频识别芯片中，其读取灵敏度为-16dBm．

关键词: 超高频射频识别, 低压, 低功耗, 亚阈值, 带隙基准

Abstract:

A novel low-voltage, low-power current mode bandgap reference circuit for the passive UHF RFID tag is presented. The I_CTAT current is generated by V_BE of the BJT transistor. The I_CTAT current is generated by the MOSFET biased in the sub-threshold region, based on the theory that the I-V curve of the sub-threshold MOSFET shows an exponential relationship. The circuit is designed and implemented by TSMC 0.18μm CMOS technology. The biggest variation of V_ref of the reference is smaller than 1.75％. Test results show that the power of the circuit is 0.65μW, and that the minimum operating voltage is 0.829V. The active area of the circuit is about 0.04mm². As a result, the read sensitivity of the tag with the proposed bandgap reference circuit is -16dBm.

Key words: ultra high frequency radio frequency identification, low voltage, low power, sub-threshold, bandgap reference

中图分类号:

TN202

杜永乾;庄奕琪;李小明;景鑫;戴力. 一种新型无源UHF RFID带隙基准电路[J]. J4, 2013, 40(2): 148-152+200.

DU Yongqian;ZHUANG Yiqi;LI Xiaoming;JING Xin;DAI Li. New type bandgap reference for UHF RFID tag[J]. J4, 2013, 40(2): 148-152+200.

参考文献

［1］ Banba H, Shiga H, Umezawa A. A CMOS Bandgap Reference Circuit with Sub-1-V Operation ［J］. IEEE Journal of Solid-State Circuits, 1999, 34(2): 670-674.
［2］ Leung K N, Mok P T. Sub-1-V15-ppm/℃ CMOS bAndgap Voltage Reference without Requiring Low Threshold Voltage Device ［J］. IEEE Journal of Solid-State Circuits, 2002, 37(2): 526-530.
［3］ Sawan Y H. A 900 mV 25 μW High PSRR CMOS Voltage Reference Dedicated to Implantable Micro-devices ［EB/OL］. ［2011-10-10］. http://wenku.baidu.com/view/7e9d1ec66137ee06eff91897.html.
［4］ Isikhan M, Reich T, Richter A, et al. A New Low Voltage Bandgap Reference Topology ［EB/OL］.［2011-10-11］. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5410966&tag=1.
［5］ Giustolisi G, Palumbo G, Criscione M, et al. A New Voltage Reference Topology Based on Subthreshold MOSFETs ［DB/OL］. ［2011-10-11］. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1471547&tag=1.
［6］ Luis H, Pimenta T C, Moreno R L. An Ultra Low-voltage Ultra Low-power CMOS Threshold Voltage Reference ［J］. IEICE Trans on Electronics, 2007, 90(10): 2044-2050.
［7］余国义.低压低功耗CMOS基准参考源的设计［D］. 武汉: 华中科技大学, 2006.
［8］ Cajueiro P J, dos Reis Filho C A. CMOS Bandgap with Base-current Thermal Compensation ［C］//IEEE Proc of the 15th Symposium on Integrated Circuits and System Design (SBCCI). Brazil: IEE, 2002: 407-411.
［9］朱樟明, 杨银堂, 尹韬. 一种新型低压高精度CMOS电流源［J］. 西安电子科技大学学报, 2005, 32(2): 174-178.
Zhu Zhangming, Yang Yintang, Yin Tao. A Novel Low Voltage High Precision CMOS Current Reference ［J］. Journal of XiDian of university, 2005, 32(2): 174-178.
［10］ Ng D C W, Kwong D K K, Wong N. A Sub-1 V, 26 W, Low-output-impedance CMOS Bandgap Reference with a Low Dropout or Source Follower Mode ［J］. IEEE Trans on Very Large Scale Integration (VLSI) Systems, 2011, 19(7): 1305-1309.
［11］ Fayomi C J B, Stratz S J. Novel Approach to Low-voltage Low-power Bandgap Reference Voltage in Standard CMOS Process ［DB/OL］. ［2011-10-13］. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4263340.
［12］ Giustolisi G, Palumbo G, Criscione M, et al. A Low Voltage Low-power Voltage Reference Based on Subthreshold MOSFETs ［J］. IEEE J Solid-State Circuits, 2003, 38(1): 151-154.

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一种新型无源UHF RFID带隙基准电路

New type bandgap reference for UHF RFID tag

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