CFD模拟RPCVD的正交法优化设计与分析

doi:10.3969/j.issn.1001-2400.2013.04.012

J4 ›› 2013, Vol. 40 ›› Issue (4): 72-78.doi: 10.3969/j.issn.1001-2400.2013.04.012

CFD模拟RPCVD的正交法优化设计与分析

戴显英;郭静静;邵晨峰;郑若川;郝跃

(西安电子科技大学宽带隙半导体国家重点实验室，陕西西安 710071)

收稿日期:2012-12-30 出版日期:2013-08-20 发布日期:2013-10-10
通讯作者: 戴显英
作者简介:戴显英(1961-)，男，教授，E-mail: xydai@xidian.edu.cn．
基金资助:
国家重点基础研究(973)资助项目(6139801-1)

Orthogonal optimal design and analysis of RPCVD simulation by CFD

DAI Xianying;GUO Jingjing;SHAO Chenfeng;ZHENG Ruochuan;HAO Yue

(State Key Lab. of Wide Bandgap Semiconductor Technology Disciplines, Xidian Univ., Xi'an 710071， China)

Received:2012-12-30 Online:2013-08-20 Published:2013-10-10
Contact: DAI Xianying

摘要/Abstract

摘要：

采用正交法对减压化学气相淀积生长SiGe材料的多因素、多水平计算流体动力学模拟进行优化设计．采用FLUENT软件，对正交优化设计的试验进行了密度、速度及压强分布的模拟．对生长表面9点位置处的模拟结果进行了极差和方差分析，得到了最终的模拟优化工艺参数．正交法设计的模拟优化参数与实际工艺实验参数相一致，低温生长应变SiGe的优化模拟参数为流量1.67×10^-4m³/s，基座温度823K，反应室压强2666.44Pa；高温生长弛豫SiGe的优化模拟参数为流量1.67×10^-4m³/s，基座温度1123K，反应室压强7999.32Pa．

关键词: 正交法, 计算流体动力学, 减压化学气相淀积, 锗硅

Abstract:

The simulation of multi-level and multi-factor for the growth of SiGe matetial by RPCVD is designed by adopting the orthogonal method. A FLUENT simulation of density, velocity and pressure distributions for the above designs is given by using CFD software. According to the range and variance analysis of the growth surface simulation results in nine positions, the final optimized simulation parameters are obtained. The optimization results by using the Orthogonal Method that the flux of the inlet is 1.67×10^-4m³/s, the pressure of the chamber is 2666.44Pa at low tempreture(823K) and that the flux keeps 1.67×10^-4m³/s, and the pressure is 7999.32Pa at high tempreture(1123K) are consistent with those by practical technology.

Key words: orthogonal method, computational fluid dynamics, reduced pressure chemical vapor deposition, SiGe

中图分类号:

TN304.005

戴显英;郭静静;邵晨峰;郑若川;郝跃. CFD模拟RPCVD的正交法优化设计与分析[J]. J4, 2013, 40(4): 72-78.

DAI Xianying;GUO Jingjing;SHAO Chenfeng;ZHENG Ruochuan;HAO Yue. Orthogonal optimal design and analysis of RPCVD simulation by CFD[J]. J4, 2013, 40(4): 72-78.

参考文献

［1］ Hartmann J M, Burdin M, Rolland G. Growth Kinetics of Si and SiGe on Si(1 0 0), Si(1 1 0) and Si(1 1 1) Surfaces ［J］. Crystal Growth, 2006, 294(2): 288-295.
［2］ Song Y J, Lim J W, Kang J Y, et al. High Transconductance Modulation-doped SiGe pMOSFETs by RPCVD ［J］. Electronics Letters, 2002, 38(23): 1479-1480.
［3］王福军. 计算流体动力学分析-CFD软件原理与应用［M］. 北京: 清华大学出版社, 2004.
［4］戴显英, 郑若川. 弛豫锗硅减压化学气相淀积的CFD模型及仿真［J］. 西安电子科技大学学报, 2012, 39(5): 186-191.
Dai Xianying, Zheng Ruochuan. CFD Modeling of Relaxation SiGe RPCVD ［J］. Journal of Xidian University, 2012, 39(5): 186-191.
［5］秦琦, 周凯, 莫晓亮. 基于有限体积法的MOCVD系统反应室的设计［J］. 真空科学与技术学报, 2012, 32(6): 457-462.
Qin Qi, Zhou Kai, Mo Xiaoliang. Simulation Assisted Design of Metal Organic Chemical Vapor Deposition Reactor［J］. Chinese Journal of Vaccum Science and Technology, 2012, 32(6): 457-462.
［6］吴浩扬, 常炳国, 朱长纯. 遗传算法的一种特例——正交试验设计法［J］. 软件学报, 2001,12(1): 148-153.
Wu Haoyang, Chang Bingguo, Zhu Changchun. A Special Case of Genetic Algorithm—Orthogonal Experimental Design Method ［J］. Journal of Software, 2001, 12(1): 148-153.
［7］周康民, 王璇. 正交试验在实验设计中的应用［J］. 江苏地质,1998, 22(4): 213-215.
Zhou Kangmin, Wang Xuan. Application of Orthogonal Test in the Geological Experimental Design ［J］. Jiangsu Geology, 1998, 22(4): 213-215.
［8］孙俊若. 正交法在雷达软件测试中的应用［J］. 信息与电子工程, 2009, 7(6): 501-505.
Sun Junruo. Test for Radar Software Based on Intersection Method ［J］. Information and Electronic Engineering, 2009, 7(6): 501-505.
［9］董昕, 于秀山. 正交试验方法在软件测试中的应用［J］. 北京化工大学学报, 2007, 34(1): 130-132.
Dong Xin, Yu Xiushan. Application of Orthogonal Experiment Approach In Software Test ［J］. Journal of Beijing University of Chemical Technology, 2007, 34(1): 130-132.
［10］闫建新, 葛伟坡, 李卫华. 多片干法蚀刻设备蚀刻均匀性工艺优化研究［J］. 微电子学, 2012, 42(6): 865-869.
Yan Jianxin, Ge Weipo, Li Weihua. Optimization of Etching Uniformity for Multi-Wafer Dry Etch Equipment ［J］. Microelectronics, 2012, 42(6): 865-869.
［11］田口玄一. 实验设计法［M］. 北京: 机械工业出版社, 1987.
［12］王国富, 王志忠. 应用统计［M］. 长沙: 中南大学出版社, 2003.
［13］柳伟达, 周旗钢, 何自强. RPCVD生长SiGe薄膜及其性能研究［J］. 工艺技术与材料, 2010, 35(8): 791-794.
Liu Weida, Zhou Qigang, He Ziqiang. Investigation on SiGe Film Growth by RPCVD and Its Oerformance ［J］. Precess Technique and Material, 2010, 35(8): 791-794.
［14］ Hartmann J M, Benevent V, Deguet C. Very Low Temperature Reduced Pressure Chemical Vapor Deposition of SiGe, Si1-yCy and Si: P Layers: Silane Versus Disilane ［C］//2012 International Silicon-Germanium Technology and Device Meeting. Berkeley: Electron Devices Society, 2012: 9-10.
［15］ Ren Shen, Rong Yiwen. Selective Epitaxial Growth of Ge/Si0.15Ge0.85 Quantum Wells on Si Substrate Using Reduced Pressure Chemical Vapor Deposition ［J］. Applied Physics Letters, 2011, 98(15): 151108.
［16］刘大力. RPCVD生长应变Si/应变SiGe薄膜的研究［D］. 北京: 北京有色金属研究总院, 2012.
［17］陈达, 刘林杰, 薛忠营. SiGe薄膜的RPCVD负载影响及特性研究［J］. 材料导报, 2012, 26(7): 22-24.
Chen Da, Liu Linjie, Xue Zhongying. Research on the Loading Effects andPerformance of SiGe Film Growth by RPCVD ［J］. Mater Rev, 2012, 26(7): 22-24.

[1]	余文敏,卢煜旻. 52 GHz平衡式二倍频器设计[J]. 西安电子科技大学学报, 2019, 46(3): 160-166.
[2]	马英;段清娟;胡锐锋;唐力南. 多孔孔板与楔形节流装置的数值模拟与标定[J]. 西安电子科技大学学报, 2018, 45(1): 60-65.
[3]	戴显英;郑若川;郭静静;张鹤鸣;郝跃;邵晨峰;吉瑶;杨程. 弛豫锗硅减压化学气相淀积的CFD模型及仿真[J]. J4, 2012, 39(5): 186-191.

CFD模拟RPCVD的正交法优化设计与分析

Orthogonal optimal design and analysis of RPCVD simulation by CFD

PDF (PC)

赞

可视化

被引次数

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

Metrics

本文评价

推荐阅读 10