J4 ›› 2014, Vol. 41 ›› Issue (4): 26-30.doi: 10.3969/j.issn.1001-2400.2014.04.005

• 研究论文 • 上一篇    下一篇



  1. (西安电子科技大学 宽禁带半导体材料与器件教育部重点实验室,陕西 西安  710071)
  • 收稿日期:2013-03-26 出版日期:2014-08-20 发布日期:2014-09-25
  • 通讯作者: 吴晓鹏
  • 作者简介:吴晓鹏(1979-),女,西安电子科技大学博士研究生,E-mail:xpwu@mail.xidian.edu.cn.
  • 基金资助:


Influence of drain contact to gate space on the characteristic of the GGNMOS protection device

WU Xiaopeng;YANG Yintang;DONG Gang;GAO Haixia   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2013-03-26 Online:2014-08-20 Published:2014-09-25
  • Contact: WU Xiaopeng



关键词: 漏极接触孔到栅间距, 静电放电, 栅接地N型金属氧化物半导体


Based on the test data, the influence of DCGS on the single finger GGNMOS ESD protection device is investigated. The changing tendency of the failure current level is given by the TLP test under various layout parameter conditions realized in the SMIC 018μm CMOS process. Electrical and thermal distribution is detailed based on the device simulation. The results show that the peak value of the current density is moved in the opposite direction to the channel, which lowers the risk of LDD discharge. Meanwhile, the failure current level shows the saturation tendency because of the heat balance of the drain and substrate region which appears when the DCGS is raised to the threshold value.

Key words: drain contact to gate space (DCGS), electrostatic discharge (ESD), gate grounded NMOS (GGNMOS)


  • TN406