J4 ›› 2015, Vol. 42 ›› Issue (1): 56-61+206.doi: 10.3969/j.issn.1001-2400.2015.01.009

• 研究论文 • 上一篇    下一篇

90nm CMOS工艺下3×VDD容限静电检测电路


  1. (西安电子科技大学 宽禁带半导体材料与器件教育部重点实验室,陕西 西安  710071)
  • 收稿日期:2013-10-19 出版日期:2015-02-20 发布日期:2015-04-14
  • 通讯作者: 杨兆年
  • 作者简介:杨兆年(1986-),男,西安电子科技大学博士研究生,E-mail:e_yangzhaonian@sina.com.
  • 基金资助:

    国家自然科学基金资助项目(61376099, 11235008);教育部博士点基金资助项目(20130203130002, 20110203110012)

3×VDD-tolerant ESD detection circuit in a 90nm CMOS process

YANG Zhaonian;LIU Hongxia;ZHU Jia   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2013-10-19 Online:2015-02-20 Published:2015-04-14
  • Contact: YANG Zhaonian


提出一种90nm 1.2V CMOS工艺下只用低压器件的新型3×VDD容限的静电检测电路.该电路利用纳米工艺MOSFET的栅极泄漏特性和反馈技术来控制触发晶体管并进而开启箝位器件(可控硅整流器),同时采用多级叠加结构以承受高电压应力.在静电放电时,该电路能产生38mA的触发电流.在3×VDD电压下工作时,每个器件都处于安全电压范围,在25℃时漏电流仅为52nA.仿真结果表明,该检测电路可成功用于3×VDD容限的接口缓冲器.

关键词: 检测电路, 静电泄放, 反馈, 泄漏特性, 叠加晶体管


A new low leakage 3×VDD-tolerant electrostatic discharge (ESD) detection circuit only using the low-voltage device is proposed in a 90nm 1.2V CMOS process. Gate leaky characteristics of the nanoscale MOSFET and the feedback technique are used to control the trigger MOSFET and turn on the clamp device silicon-controlled rectifier (SCR). The multi-stage stacked-transistors structure is used to sustain a high voltage stress. The proposed detection circuit can generate 38mA current to turn on the clamp device SCR under the ESD stress. Under normal 3×VDD operating conditions, all the devices are free from over-stress voltage threat. The leakage current is 52nA under the 3×VDD bias at 25℃. Simulation result shows that the circuit can be successfully used for the 3×VDD-tolerant I/O buffer.

Key words: detection circuit, electrostatic discharge, feedback, leaky characteristic, stacked transistors


  • TN495