一种5～20GHz低插损低相位误差的CMOS衰减器

doi:10.3969/j.issn.1001-2400.2015.02.015

J4 ›› 2015, Vol. 42 ›› Issue (2): 89-94+145.doi: 10.3969/j.issn.1001-2400.2015.02.015

一种5～20GHz低插损低相位误差的CMOS衰减器

张岩龙;庄奕琪;李振荣;任小娇;齐增卫;杜永乾;李红云

(西安电子科技大学微电子学院，陕西西安 710071)

收稿日期:2013-12-05 修回日期:2013-12-23 出版日期:2015-04-20 发布日期:2015-04-14
通讯作者: 李振荣
作者简介:张岩龙(1988-)，男，西安电子科技大学博士研究生, E-mail: ylzhang@xidian.edu.cn．
基金资助:
国家自然科学基金资助项目(61306033)

5～20GHz CMOS attenuator with a low insertion loss and a low phase error

ZHANG Yanlong;ZHUANG Yiqi;LI Zhenrong;REN Xiaojiao;QI Zengwei;DU Yongqian;LI Hongyun

(School of Microelectronic, Xidian Univ., Xi'an 710071, China)

Received:2013-12-05 Revised:2013-12-23 Online:2015-04-20 Published:2015-04-14
Contact: LI Zhenrong

摘要/Abstract

摘要： 设计了一种具有低插入损耗、低相位误差的5位CMOS集总式衰减器．该衰减器基于0.18μm CMOS工艺，采用桥T和π形衰减结构，通过NMOS晶体管开关控制5个独立的衰减模块，在5～20GHz的工作频段范围内实现步长1dB、动态范围0～31dB的信号幅度衰减．其中，串联控制开关管采用体端通过电阻与源极相连的结构，在不增加寄生电容的前提下，降低导通电阻；并联控制开关采用体端交流悬浮结构，以提高整体衰减器的线性度．较大衰减量的衰减模块采用电感进行补偿，以减小附加相移．仿真结果显示，该衰减器插入损耗最小为6.1dB，最大为12.6dB，各状态衰减量均方根小于0.5dB，附加相移均方根小于3.4°，中心频率处1dB压缩点为14.13dBm．

关键词: 衰减器, 步进式衰减器, CMOS开关, 低插入损耗, 低相位误差

Abstract: A 5～20GHz lumped CMOS attenuator with a low insertion loss and a low phase error is presented. The attenuator is based on bridged-T and π type attenuative networks and implemented with 0.18μm CMOS technology, and it operates with 5 independent attenuative modules by NMOS switches. At the frequency range of 5～20GHz, the attenuator has a 0～31dB attenuation range with 1dB increase. In the attenuator, the series switches are body-source connected by a resistor to minimize the insertion loss without involving too much capacitance, and the shunt switches are ac bodyfloated to improve linearity. The larger attenuative modules are compensated for insertion phase with inductors. As the layout simulation results show, the minimum insertion loss is 6.1dB and the maximum one is 12.6dB. The root mean square (RMS) attenuative amplitude is less than 0.5dB, and the RMS insertion phase is less than 3.4°. The 1dB compression point at the center frequency is 14.13dBm.

Key words: attenuator, step attenuator, CMOS switch, low insertion loss, low phase error

张岩龙;庄奕琪;李振荣;任小娇;齐增卫;杜永乾;李红云 . 一种5～20GHz低插损低相位误差的CMOS衰减器 [J]. J4, 2015, 42(2): 89-94+145.

ZHANG Yanlong;ZHUANG Yiqi;LI Zhenrong;REN Xiaojiao;QI Zengwei;DU Yongqian;LI Hon. 5～20GHz CMOS attenuator with a low insertion loss and a low phase error [J]. J4, 2015, 42(2): 89-94+145.

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一种5～20GHz低插损低相位误差的CMOS衰减器

5～20GHz CMOS attenuator with a low insertion loss and a low phase error

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