光伏型InSb红外探测器瞬态特性界面陷阱效应

doi:10.3969/j.issn.1001-2400.2017.03.011

西安电子科技大学学报

光伏型InSb红外探测器瞬态特性界面陷阱效应

陈晓冬1;杨翠1;向培1;刘鹏2;邵晓鹏1;张小雷3;吕洐秋3

(1. 西安电子科技大学物理与光电工程学院，陕西西安 710071;
2. 工业和信息化部电子第五研究所元器件检测中心，广东广州 510000;
3. 中国空空导弹研究院红外探测器航空科技重点实验室，河南洛阳 471009)

收稿日期:2016-05-26 出版日期:2017-06-20 发布日期:2017-07-17
作者简介:陈晓冬(1979-)，男，工程师，西安电子科技大学博士研究生，E-mail: cxd_1979@163.com
基金资助:
航空科学基金资助项目(2012*****02)；国家自然科学基金资助项目(61307121)

Interface trap effect on the transient characteristics of a photovoltaic InSb infrared detector

CHEN Xiaodong1;YANG Cui1;XIANG Pei1;LIU Peng2;SHAO Xiaopeng1;ZHANG Xiaolei3;LV Yanqiu3

(1. School of Physics and Optoelectronic Engineering, Xidian Univ., Xi'an 710071, China;
2. National Quality Surveillance and Inspection Center for General Electronic Component, CEPREI, Guangzhou 510000, China;
3. Aviation Key Lab. of Science and Technology on Infrared Detectors, China Airborne Missile Aviation Institute, Luoyang 471009, China)

Received:2016-05-26 Online:2017-06-20 Published:2017-07-17

摘要/Abstract

摘要：

界面陷阱会显著影响探测器的瞬态特性，为揭示其内在机理，并为探测器设计提供借鉴，基于二维仿真开展了背照式光伏型InSb红外探测器瞬态特性的界面陷阱效应研究，分析了界面陷阱与空穴浓度、复合率、电场等关键物理参数的相关性．研究表明，随着界面陷阱密度的增加，界面附近的复合率和电场会随之增加，空穴浓度会减小，而在电流密度分布中出现了“黑洞”，且该“黑洞”位置逐渐向pn结移动．此外，随着界面陷阱密度的增加，瞬态光响应会逐渐减小．

关键词: InSb, 界面陷阱, 瞬态特性, 光伏型红外探测器

Abstract:

The transient characteristics can be significantly affected by the interface trap. In order to reveal the intrinsic mechanism and provide some references for the design of detectors, the interface trap effect on the transient characteristics of a back-illuminated photovoltaic InSb infrared detector is studied with two-dimensional simulations. The relationships between interface traps and some key physical parameters, such as the hole concentration, the recombination rate and the electric field, are analyzed to reveal the intrinsic mechanisms of the influence of the interface traps on the transient characteristics. Studies show that with the increase of the interface trap density, the recombination rate and the electric field near the interface increase, the hole concentration decreases, and the “black holes” in current density distribution appear and move forward to the pn junction. And the transient photoresponse decreases with the increase of the interface trap density.

Key words: InSb, interface traps, transient characteristic, photovoltaic infrared detector

陈晓冬;杨翠;向培;刘鹏;邵晓鹏;张小雷;吕洐秋. 光伏型InSb红外探测器瞬态特性界面陷阱效应[J]. 西安电子科技大学学报, 2017, 44(3): 61-65+88.

CHEN Xiaodong;YANG Cui;XIANG Pei;LIU Peng;SHAO Xiaopeng;ZHANG Xiaolei;LV Yanqiu. Interface trap effect on the transient characteristics of a photovoltaic InSb infrared detector[J]. Journal of Xidian University, 2017, 44(3): 61-65+88.

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光伏型InSb红外探测器瞬态特性界面陷阱效应

Interface trap effect on the transient characteristics of a photovoltaic InSb infrared detector

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