微带线热致无源互调产物计算模型

doi:10.3969/j.issn.1001-2400.2017.03.021

西安电子科技大学学报

微带线热致无源互调产物计算模型

何鋆1,2;王琪1;胡天存1;王新波1;李军1;崔万照1;刘纯亮2

(1. 中国空间技术研究院西安分院空间微波技术重点实验室，陕西西安 710100;
2. 西安交通大学电子与信息工程学院，陕西西安 710049)

收稿日期:2016-04-21 出版日期:2017-06-20 发布日期:2017-07-17
通讯作者: 崔万照(1975-)，男，研究员，博士，E-mail：cuiwanzhao@126.com
作者简介:何鋆(1987-)，男，博士, E-mail: hawkinsky@163.com
基金资助:
国家自然科学基金资助项目(U1537211)；中国博士后科学基金资助项目(2015M572661XB)；空间微波技术重点实验室基金资助项目(9140C530101130C53013，9140C530101140C53231)

Calculation model for thermal-caused passive intermodulation product of microstrip lines

HE Yun1,2;WANG Qi1;HU Tiancun1;WANG Xinbo1;LI Jun1;CUI Wanzhao1;LIU Chunliang2

(1. National Key Lab. of Science and Technology on Space Microwave, China Academy of Space Technology (Xi'an), Xi'an 710100, China;
2. School of Electronics and Information Engineering, Xi 'an Jiaotong Univ., Xi'an 710049, China)

Received:2016-04-21 Online:2017-06-20 Published:2017-07-17

摘要/Abstract

摘要：

针对低无源互调特性微带线设计中的介质材料选择问题，建立了一种新的无源互调产物计算模型．该模型基于电热耦合效应，利用随时间作周期性变化的边界条件，结合一维热传导方程，得到了微带线导带温度与射频电流密度的关系式．在此基础上，通过分析受温度调制的电导率与载波电场的相互作用，获得了三阶互调产物电流密度与射频电流密度、介质板热学参数、长度和载波差频的关系式．进一步利用该模型计算了3种微带线的无源互调产物功率．结果表明，射频电流密度是影响无源互调产物的关键因素．该模型可以综合分析导带宽度、介质板热学参数、长度和载波差频对微带线三阶无源互调产物的影响，指导低无源互调特性微带线的设计．

关键词: 互调干扰, 微带线, 热效应

Abstract:

Aiming at the dielectric materials selection in design of microstrip lines with low passive intermodulation product, a new calculation model for passive intermodulation product is presented. The boundary condition varying with time periodically and one-dimension heat conduction equation are utilized to investigate the effect of the RF current density on the temperature of the strip in the model. The relationship between current density of the third order intermodulation product and RF current density, thermal parameters of dielectric substrate, length and beat frequency of carriers is obtained, by analyzing the interaction between conductance modulated by temperature and the electric field of carriers. The power of the third order passive intermodulation product of three kinds of microstrip lines are calculated, with the results indicating that the RF current density is the key factor affecting the passive intermodulation product. The effect of the width of the conduct strip, thermal parameters of the dielectric substrate, length and beat frequency of carriers on the third order intermodulation product can be obtained with the help of the model, which is useful for the design of microstrip lines with low passive intermodulation.

Key words: intermodulation distortion, microstrip lines, thermal effects

何鋆;王琪;胡天存;王新波;李军;崔万照;刘纯亮. 微带线热致无源互调产物计算模型[J]. 西安电子科技大学学报, 2017, 44(3): 120-126.

HE Yun;WANG Qi;HU Tiancun;WANG Xinbo;LI Jun;CUI Wanzhao;LIU Chunliang. Calculation model for thermal-caused passive intermodulation product of microstrip lines[J]. Journal of Xidian University, 2017, 44(3): 120-126.

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微带线热致无源互调产物计算模型

Calculation model for thermal-caused passive intermodulation product of microstrip lines

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