西安电子科技大学学报

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一种低失调高PSRR的带隙基准电路

李娅妮;孙亚东;王旭   

  1. (西安电子科技大学 微电子学院,陕西 西安 710071)
  • 收稿日期:2016-09-26 出版日期:2017-10-20 发布日期:2017-11-29
  • 作者简介:李娅妮(1979-),女,副教授,E-mail: yanili@mail.xidian.edu.cn
  • 基金资助:

    国家自然科学基金资助项目(61574105,61574103)

Low-offset high-PSRR bandgap voltage reference

LI Yani;SUN Yadong;WANG Xu   

  1. (School of Microelectronics, Xidian Univ., Xi'an 710071, China)
  • Received:2016-09-26 Online:2017-10-20 Published:2017-11-29

摘要:

针对带隙基准的精度会影响集成电路的性能问题,提出了一种新的带隙基准电路结构.通过采用负反馈补偿网络来增强电源抑制比,降低失调电压,从而提高了电路的稳定性和精度.基于SMIC 018μm 1.8V CMOS工艺,利用Cadence spectre仿真,结果表明: 在-30℃~100℃温度范围内,温漂系数为34.6×10-6/℃; 低频下电源抑制比为-63.5dB; 功耗仅1.5μW.该电路适用于低压低功耗能量获取系统.

关键词: 带隙基准电路, 电源抑制比, 低失调, 低功耗

Abstract:

Based on the problem that the accuracy of the bandgap affects the performance of the integrated circuit, a novel BGR (bandgap voltage reference) is proposed. It utilizes a feedback compensation network to enhance PSRR and reduce the offset voltage, which improves the system stability and precision. Cadence spectre simulation has been done by the SMIC 018μm 1.8V CMOS process for validation. The results show that the achieved temperature coefficient is 34.6×10-6/℃ over -30℃ to 100℃ and that the PSRR is -63.5dB at a low frequency. The power assumption is only 1.5μW. The circuit is suitable for a low-voltage low-power energy harvesting system.

Key words: bandgap voltage reference, power supply rejection ratio, low-offset, low-power