一种低噪声GaAs HBT VCO的设计与实现

doi:10.3969/j.issn.1001-2400.2018.03.006

西安电子科技大学学报

一种低噪声GaAs HBT VCO的设计与实现

武岳;吕红亮;张玉明;张义门

(西安电子科技大学微电子学院，陕西西安 710071)

收稿日期:2017-07-12 出版日期:2018-06-20 发布日期:2018-07-18
作者简介:武岳(1986-)，男，西安电子科技大学博士研究生， E-mail：k3wwyk3wwy@126.com
基金资助:
共性基础基金资助项目(9140A***501)；国家部委基金资助项目(3151***301)；国家部委科技创新基金资助项目(48**4)

Design and implementation of a low-phase-noise GaAs HBT VCO

WU Yue;LV Hongliang;ZHANG Yuming;ZHANG Yimen

(School of Microelectronics, Xidian Univ., Xi'an 710071, China)

Received:2017-07-12 Online:2018-06-20 Published:2018-07-18

摘要/Abstract

摘要：

为了降低双极型工艺中二极管对相位噪声的影响，实现了一种工作在K波段的全集成差分压控振荡器．该振荡器基于砷化镓异质结双极晶体管工艺来实现，电路采用改进的π形反馈网络来提高振荡回路的品质因数，降低了压控振荡器的相位噪声，并补偿了电路本身存在的180°相位偏移．芯片的频率变化范围为23.123GHz到23.851GHz，最大输出功率为-1.68dBm; 整个电路由-6V的电源供电，直流功耗为72mW，控制电压为-3V时相位噪声为-103.12dBc／Hz@1MHz，芯片面积为0.49mm²．文中采用的电路结构能够降低双极型工艺中二极管对压控振荡器相位噪声的影响，在不牺牲压控振荡器调谐宽度的情况下可实现低的相位噪声．

关键词: K波段, 相位噪声, 改进的π形反馈网络, 砷化镓异质结双极晶体管, 压控振荡器

Abstract:

In order to reduce the effect of diodes in the bipolar process on the phase noise, a fully integrated K-band differential voltage controlled oscillator (VCO) is proposed. The VCO is realized based on gallium arsenide (GaAs) hetero-junction bipolar transistor (HBT) technology with a cutoff frequency f_T of 75GHz and a maximum oscillating frequency f_MAX of 80GHz. To reduce the phase noise of the VCO, the modified π-feedback networks are employed and applied to compensate the 180°phase shift. The oscillation frequency of this chip is from 23.123GHz to 23.851GHz. At the dc power consumption of 72mW from a -6V power supply,the measured maximum output power is -1.68dBm. The phase noise is about -103.12dBc／Hz at 1MHz offset and the chip area is 0.49mm². It is shown that the circuit structure can reduce the effect of diodes in the bipolar process on the phase noise and achieve low phase noise without sacrificing the tuning range of the VCO.

Key words: K-band, phase noise, modified π-feedback network, gallium arsenide (GaAs) hetero-junction bipolar transistor (HBT), voltage controlled oscillator(VCO)

武岳;吕红亮;张玉明;张义门. 一种低噪声GaAs HBT VCO的设计与实现[J]. 西安电子科技大学学报, 2018, 45(3): 30-34.

WU Yue;LV Hongliang;ZHANG Yuming;ZHANG Yimen. Design and implementation of a low-phase-noise GaAs HBT VCO[J]. Journal of Xidian University, 2018, 45(3): 30-34.

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一种低噪声GaAs HBT VCO的设计与实现

Design and implementation of a low-phase-noise GaAs HBT VCO

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