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  1. (西安电子科技大学 微电子研究所, 陕西 西安 710071)

  • 收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2003-02-20 发布日期:2003-02-20

The state of arts for GaN-based blue-light-emitting diodes



  1. (Research Inst. of Microelectronics, Xidian Univ., Xi'an 710071, China)
  • Received:1900-01-01 Revised:1900-01-01 Online:2003-02-20 Published:2003-02-20

摘要: 介绍了GaN材料的基本特性、GaN材料适于做蓝光LED的优势以及具有典型代表意义的GaN基LED器件,讨论了该领域国际最新研究出的蓝光LED和工作原理;从其发展进程中不难看出,改变器件结构、提高材料质量或采用新型材料使GaN基蓝光LED的光谱质量和量子效率有了本质提高.同时就制备过程中的关键工艺技术(包括p型掺杂、退火温度、欧姆接触等)及国内外研究进展进行了探讨,对GaN基LED的发展方向及应用前景提出了展望.

关键词: GaN, 蓝光LED, 发展进程

Abstract: GaN-based blue-light-emiting diodes, one of the most important applications with the GaNmaterial that we investigate, are the key color display devices. This paper introduces briefly the material characteristics of GaN, the reason GaN is suitable for blue LEDs and the typical devices which have been invented. It discusses the up-to-date GaN-based LEDs and their working mechanism in detail. From the development of blue LEDs, we can realize that luminescent spectrum and quantum efficiency are improved dramatically by changing device structures, improving material qualities or using new type material. Furthermore, some pivotal technology(including P-doping, annealing temperature, ohmic contact, etc.) in fabrications and the up-to-date state of arts for blue LEDs is discussed throughly too. Finally, the application and prospect in future about GaN based LEDs are forecasted.

Key words: GaN, blue LED, developement


  • TN304