四探针法测量应变Si1-xGex掺杂浓度

四探针法测量应变Si_1-xGe_x掺杂浓度

戴显英1;王伟1;张鹤鸣1;何林2;张静2;胡辉勇1;吕懿1

(1. 西安电子科技大学微电子技术研究所，陕西西安 710071;
2. 信息产业部电子24所，重庆 400060)

收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2003-04-20 发布日期:2003-04-20

Measurement of doping concentration in strained Si_1-xGe_x with four-probe array

DAI Xian-ying1;WANG Wei1;ZHANG He-ming1;HE Lin2;ZHANG Jing2;HU Hui-yong1;Lü Yi1

(1. Research Inst. of Microelectronics, Xidian Univ., Xi’an 710071， China;
2. Sichuan Inst. of Solid-state Circuits, Chongqing 400060， China)

Received:1900-01-01 Revised:1900-01-01 Online:2003-04-20 Published:2003-04-20

摘要/Abstract

摘要： 在对Si_1-xGe_x材料多子迁移率模型分析基础上，建立了Si_1-xGe_x材料电阻率与其Ge组分、掺杂浓度关系的曲线图谱. 经过对半导体材料掺杂浓度各种表征技术的分析和实验研究，提出了采用四探针法表征Si_1-xGe_x材料掺杂浓度的技术.该表征技术与Si材料掺杂浓度的在线检测技术相容，且更加简捷. 通过实验及对Si_1-xGe_x材料样品掺杂浓度的现代理化分析验证了其可行性.

关键词: Si_1-xGe_x材料迁移率模型, 电阻率, 掺杂浓度, 四探针

Abstract: Based on a new majority carrier mobility model of the strained Si_1-xGe_x material, the relation between resistivity and doping concentrations with different Ge compositions has been obtained. With this relation, the doping concentration in strained Si_1-xGe_x can be measured by using a collinear four-probe array. The characterization technique is compatible with the on-line measure of the doping concentration in Si but much simpler and more convenient.

Key words: Si_1-xGe_x material, mobility model, resistivity, doping concentration, four-probe array

中图分类号:

TN304.07

戴显英1;王伟1;张鹤鸣1;何林2;张静2;胡辉勇1;吕懿1. 四探针法测量应变Si_1-xGe_x掺杂浓度[J]. J4, 2003, 30(2): 255-258.

DAI Xian-ying1;WANG Wei1;ZHANG He-ming1;HE Lin2;ZHANG Jing2;HU Hui-yong1;Lü Yi1.

Measurement of doping concentration in strained Si_1-xGe_x with four-probe array

[J]. J4, 2003, 30(2): 255-258.

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