4H-SiC MESFET高频小信号特性的模拟与分析

4H-SiC MESFET高频小信号特性的模拟与分析

王雷;张义门;张玉明;盛立志

(西安电子科技大学微电子技术研究所, 陕西西安 710071)

收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2004-12-20 发布日期:2004-12-20

Simulation and analysis of high frequency small-signal characteristics for 4H-SiC MESFETs

WANG Lei;ZHANG Yi-men;ZHANG Yu-ming;SHENG Li-zhi

(Research Inst. of Microelectronics, Xidian Univ., Xi'an 710071, China)

Received:1900-01-01 Revised:1900-01-01 Online:2004-12-20 Published:2004-12-20

摘要/Abstract

摘要： 建立了4H-SiC MESFETs的模型，运用二维器件模拟软件MEDICI对4H-SiC MESFETs的高频小信号特性进行了研究．利用正弦稳态分析的方法对4H-SiC MESFETs的高频小信号特性进行了模拟，模拟结果与实验数值比较表明在特征频率f_T以内得到了较为满意的结果．分析了不同的栅长、栅漏间距、不同的沟道掺杂以及温度变化对SiC MESFET特征频率f_T的影响．

关键词: 4H-SiC, 金属-半导体场效应晶体管, 高频小信号, 特征频率

Abstract: Small-signal high frequency characteristics of 4H-SiC MESFETs have been studied with the two-dimensional device simulator MEDICI based on the operation model of 4H-SiC MESFETs developed in this paper. The simulation results using teh sinusoidal steady-state analysis approach agree well with the experimental data within the cut-off frequency. Also, the effects of the gate length, gate-to-drain spacer distances, inpruity concentration and lemperature on the high frequency characteristic of SiC MESFETs have been studied based on the presented model.

Key words: 4H-SiC, MESFET, high frequency small-signal, cut-off frequency

中图分类号:

TN303

王雷;张义门;张玉明;盛立志. 4H-SiC MESFET高频小信号特性的模拟与分析[J]. J4, 2004, 31(6): 825-828.

WANG Lei;ZHANG Yi-men;ZHANG Yu-ming;SHENG Li-zhi.

Simulation and analysis of high frequency small-signal characteristics for 4H-SiC MESFETs

[J]. J4, 2004, 31(6): 825-828.

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