基于可动电荷的SiGe HBT势垒电容

基于可动电荷的SiGe HBT势垒电容

吕懿;张鹤鸣;戴显英;胡辉勇;舒斌

(西安电子科技大学微电子技术研究所, 陕西西安 710071)

收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2004-12-20 发布日期:2004-12-20

Junction capacitance in the SiGe HBT based on movable charge

Lü Yi;ZHANG He-ming;DAI Xian-ying;HU Hui-yong;SHU Bin

(Research Inst. of Microelectronics, Xidian Univ., Xi'an 710071, China)

Received:1900-01-01 Revised:1900-01-01 Online:2004-12-20 Published:2004-12-20

摘要/Abstract

摘要： 当SiGe HBT处于交流放大状态时，发射结空间电荷区和集电结空间电荷区存在可动电荷，因此，在考虑它们的势垒电容时，应采用微分电容．另外，集电结势垒区宽度与电流密度密切相关，依据电流密度该电容有3种情况．在SiGe HBT载流子输运基础上，建立了考虑发射势垒区载流子分布的势垒电容模型和不同电流密度下的集电结势垒电容模型．

关键词: SiGe HBT, 势垒电容, 微分电容, 可动电荷

Abstract: When the SiGe HBT is in the normally amplified condition, there is more movable charge in emitter and collector space charge regions. Thus differential capacitance should be adopted when considering their junction capacitance. Additionally the width of the junction is largely related to teh current density, so three cases exist according to the current density. Based on the consideration of carrier transit of teh SiGe HBT, the B-E junction capacitance model related to carrier distribution and the B-C junction capacitance model under different current densities are established and analysed.

Key words: SiGe HBT, junction capacitance, differential capacitance, mobile charge

中图分类号:

TN322⁺.8

吕懿;张鹤鸣;戴显英;胡辉勇;舒斌. 基于可动电荷的SiGe HBT势垒电容[J]. J4, 2004, 31(6): 837-840.

Lü Yi;ZHANG He-ming;DAI Xian-ying;HU Hui-yong;SHU Bin.

Junction capacitance in the SiGe HBT based on movable charge

[J]. J4, 2004, 31(6): 837-840.

[1]	戴显英1;张鹤鸣1;胡辉勇1;吕懿1;王伟1;李开成2. SiGe HBT直流特性模型研究[J]. J4, 2004, 31(2): 165-169.
[2]	林大松;张鹤鸣;戴显英. SiGe HBT基区渡越时间模型[J]. J4, 2001, 28(4): 456-462.