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一种新型低压高精度CMOS电流源

朱樟明;杨银堂;尹韬   

  1. 西安电子科技大学 微电子学院,陕西 西安 710071

  • 收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2005-04-20 发布日期:2005-04-20

A novel low voltage high precision CMOS current reference

ZHU Zhang-ming;YANG Yin-tang;YIN Tao

  

  1. Research Inst. of Microelectronics, Xidian Univ., Xi′an 710071, China
  • Received:1900-01-01 Revised:1900-01-01 Online:2005-04-20 Published:2005-04-20

摘要: 采用低压与温度成正比基准源和衬底驱动低压运算放大器电路,设计了一种新型的低压高精度CMOS电流源电路,并采用TSMC 0.25μm CMOS Spice模型进行了电源特性、温度特性及工艺偏差的仿真.在室温下,当电源电压处于1.0~1.8V时,低压电流源输出电流Iout约为12.437~12.497μA;当温度在0~47℃范围内,输出电流为12.447μA;各种工艺偏差条件下的最大绝对偏差为0.54μA,与典型工艺模型下的相对偏差为4.34%.

关键词: 电流源, CMOS, 衬底驱动

Abstract: Based on the low voltage PTAT bandgap reference and bulk-driven low voltage operational amplifier, a novel low voltage high precision CMOS current reference is implemented.The supply, temperature and technology characteristics are simulated by TSMC 0.25μm CMOS Spice models.When the supply voltage rages from 1.0~1.8V, the output current is equal to 12.437~12.497μA at room temperature.When the temperature ranges from 0~47℃, the output current is also equal to 12.447μA.The maximal absolute current error of technology is equal to 0.54μA, and the relative error to the normal output current is 4.34%.

Key words: current source, CMOS, bulk driven

中图分类号: 

  • TN402