AlGaN/GaN HEMT研制及特性分析

AlGaN/GaN HEMT研制及特性分析

王冲;郝跃;张进城

(西安电子科技大学微电子研究所,陕西西安 710071)

收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2005-04-20 发布日期:2005-04-20

Development and characteristics of AlGaN/GaN HEMT

WANG Chong;HAO Yue;ZHANG Jin-cheng

(Research Inst. of Microelectronics, Xidian Univ., Xi'an 710071, China)

Received:1900-01-01 Revised:1900-01-01 Online:2005-04-20 Published:2005-04-20

摘要/Abstract

摘要： 以蓝宝石为衬底研制出栅长1μm AlGaN/GaN HEMT．在室温下，测试该器件显示出良好的输出特性和肖特基伏安特性，最大跨导160mS/mm，栅压1V下饱和电流720mA/mm，击穿电压大于50V．分析了几个关键工艺对器件特性的影响，指出较大的欧姆接触电阻(3.19Ω·mm)限制了器件性能进一步提高，需提高肖特基接触的势垒高度．

关键词: 微波功率器件, AlGaN/GaN, 高电子迁移率晶体管

Abstract: AlGaN/GaN HEMTs grown on sapphire substrates with 1μm gate-length have been fabricated. These devices exhibit the peak extrinsic Transconductance of 160mS/mm and the saturation drain current density 720?mA/mm at 1V and the breakdown voltage above 50V. Ideal Source-drain current-voltage characteristics and Schottky characteristics of AlGaN/GaN HEMT are revealed at RT. Based on the analysis of the effect of some key processes on characteristics. The methods and directions in improving the performances of these devices are proposed in this paper.

Key words: microwave power device, AlGaN/GaN, HEMT

中图分类号:

TN325⁺.3

王冲;郝跃;张进城. AlGaN/GaN HEMT研制及特性分析[J]. J4, 2005, 32(2): 234-236.

WANG Chong;HAO Yue;ZHANG Jin-cheng.

Development and characteristics of AlGaN/GaN HEMT

[J]. J4, 2005, 32(2): 234-236.

[1]	戈勤,徐波,陶洪琪,王维波,马晓华,郭方金,刘宇. W波段3.4 W/mm GaN功率放大器MMIC[J]. 西安电子科技大学学报, 2020, 47(1): 24-29.
[2]	王海丽;吉慧芳;孙树祥;丁芃;金智;魏志超;钟英辉;李玉晓. InAlAs/InGaAs/InAlAs量子阱质子辐照损伤机理[J]. 西安电子科技大学学报, 2017, 44(4): 151-155+161.
[3]	杨小峰;史江义;马佩军;郝跃. S波段六位高精度移相器设计[J]. J4, 2014, 41(2): 125-129.
[4]	陈炽;郝跃;冯辉;马晓华;张进城;胡仕刚. X 波段单级氮化镓固态放大器[J]. J4, 2009, 36(6): 1039-1043.
[5]	岳远征;郝跃;张进城;冯倩. AlGaN/GaN HEMTs表面钝化抑制电流崩塌的机理研究 [J]. J4, 2008, 35(1): 125-128.
[6]	王冲;张金风;郝跃;冯倩;杨燕;张进城. AlGaN/GaN HEMT在N₂中高温退火研究[J]. J4, 2006, 33(6): 862-865.
[7]	暂时无作者信息. AlGaN/GaN中二维电子气研究新进展[J]. J4, 2003, 30(3): 326-330.