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肖剑1;莫良华2; 刘元成2;张福甲1   

  1. (1. 兰州大学微电子研究所,甘肃,兰州,730000;2. 清华大学深圳研究院EDA重点实验室,深圳,518057)
  • 收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2007-09-20 发布日期:2007-09-20

A novel LDO regulator design with internal frequency compensation

XIAO Jian1;MO Liang-hua2; LIU Yuan-cheng2;ZHANG Fu-jia1

  1. (1. Institute of Microelectronics, Lanzhou University, Lanzhou, 730000, China;
    2. EDA Key Lab. , Research Institute of Tsinghua University in Shenzhen, 518057, China)
  • Received:1900-01-01 Revised:1900-01-01 Online:2007-09-20 Published:2007-09-20

摘要: 提出了一种新的CMOS LDO原理和电路设计方案,实现了外接低串联等效电阻的输出负载电容,采用内部频率补偿电路实现了环路稳定,可实现外接多层陶瓷电容,极大地降低成本和改善瞬态响应,采用SMIC 0.35μm工艺流片验证了该方法的可行性,瞬态响应的测试结果表明,当负载电流为1mA 到100mA的阶跃电流时,LDO输出电压的过冲小于20mV。

关键词: LDO, 电压调整器, 频率补偿, 稳定性, 多层陶瓷电容

Abstract: A CMOS low Dropout Regulator based on a novel frequency compensation technique with a low equivalent series resistance(ESR) output capacitor is presented. An internal frequency compensation circuit is used to solve the stability and to facilitate the use of multilayer ceramic capacitors for the load of LDO regulators, thus improving transient response and reducing the cost greatly. Test result from a prototype fabricated by SMIC 0.35μm technology proves the feasibility of this method, with the measured output overshoot voltage of less than 20mV when the load cureent steps from 1mA to 100mA.

Key words: LDO, regulator, frequency compensation, stability, multilayer ceramic capacitors


  • TN732