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  1. (西安电子科技大学 宽禁带半导体材料与器件教育部重点实验室,陕西 西安 710071)
  • 收稿日期:2008-02-29 修回日期:1900-01-01 出版日期:2008-12-20 发布日期:2008-12-20
  • 通讯作者: 张鹏

Measurement and analysis of RTS noise in nano-MOS devices

ZHANG Peng;ZHUANG Yi-qi;BAO Li;MA Zhong-fa;BAO Jun-lin;LI Wei-hua

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071, China)
  • Received:2008-02-29 Revised:1900-01-01 Online:2008-12-20 Published:2008-12-20
  • Contact: ZHANG Peng

摘要: 提出了一种基于虚拟仪器的纳米MOS器件随机电报信号噪声测量方法.应用虚拟仪器平台采集随机电报信号噪声的时间序列,采用逐点差分和高斯函数拟合方法,提取了随机电报信号噪声的相对幅度,再通过数字滤波和指数函数拟合方法提取随机电报信号噪声时常数.通过对90nm MOS器件的测量分析,结果表明该方法不但计算速度远高于传统方法,而且在相同精度要求下,需要的采样点仅为传统方法的1/10.在随机电报信号时常数较小的情况下,测量精度为传统方法的几倍到几十倍.

关键词: 随机电报信号噪声, 噪声测量, 虚拟仪器, 纳米MOS器件

Abstract: A virtual-instrument based measurement and analysis method for RTS noise in nano-MOS devices is presented. After a systematic computation of both difference analysis and Gaussian function fitting, and digital filtering and exponential function fitting, the relative amplitudes and time constants of RTS noise are obtained, respectively. Verified by experimental characterization of RTS noise in 90nm MOSFETs, this new method not only manifests higher efficiency, but also needs just 1/10 sample points of the traditional method under the same requirements of measuring precision.

Key words: RTS noise, noise measurement, virtual-instrument, nano-MOS devices


  • TN386